Log in    Register
ChipFind Component Selection Catalog
For example: transistor, max232, lt319a
  

Discrete Semiconductor Products  ·  MOSFETs - Single
 
SPU30P06P

- Dimensional Drawing

SPU30P06P — MOSFET P-CH 60V 30A IPAK

ManufacturerInfineon Technologies
Harmful substancesRoHS   Lead-free
SeriesSIPMOS®
Rds On (Max) @ Id, Vgs75 mOhm @ 21.5A, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs48nC @ 10V
Current - Continuous Drain (Id) @ 25° C30A
Input Capacitance (Ciss) @ Vds1535pF @ 25V
FET PolarityP-Channel
FET FeatureStandard
Power - Max125W
Mounting TypeThrough Hole
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
Found under nameSP000012844, SPU30P06P-ND, SPU30P06PIN, SPU30P06PX, SPU30P06PXK
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BSP296 L6327BSP296 L6327Infineon TechnologiesMOSFET N-CH 100V 1.1A SOT-223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 17.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.1A  ·  Input Capacitance (Ciss) @ Vds: 364pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.79W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,63
from 0,94		Additional information
Find at suppliers
SPU18P06PSPU18P06PInfineon TechnologiesMOSFET P-CH 60V 18.6A TO-251
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18.6A  ·  Input Capacitance (Ciss) @ Vds: 860pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 80W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
from 0,54
from 1,35		Additional information
Find at suppliers
BSS123 E7874Infineon TechnologiesMOSFET N-CH 100V 170MA SOT-23
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 2.67nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 170mA  ·  Input Capacitance (Ciss) @ Vds: 69pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
Additional information
Find at suppliers
SPP70N10LSPP70N10LInfineon TechnologiesMOSFET N-CH 100V 70A TO-220
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 240nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 4540pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
Additional information
Find at suppliers
BSS87E6327TBSS87E6327TInfineon TechnologiesMOSFET N-CH 240V 260MA SOT-89
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V  ·  Drain to Source Voltage (Vdss): 240V  ·  Gate Charge (Qg) @ Vgs: 5.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 260mA  ·  Input Capacitance (Ciss) @ Vds: 97pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-89
from 0,38
from 0,84		Additional information
Find at suppliers
BSS192PE6327BSS192PE6327Infineon TechnologiesMOSFET P-CH 250V 190MA SOT-89
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 6.1nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 190mA  ·  Input Capacitance (Ciss) @ Vds: 104pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-89
Additional information
Find at suppliers
BSP613P L6327BSP613P L6327Infineon TechnologiesMOSFET P-CH 60V 2.9A SOT-223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2.9A  ·  Input Capacitance (Ciss) @ Vds: 875pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,56
from 1,27		Additional information
Find at suppliers
SPB10N10 GSPB10N10 GInfineon TechnologiesMOSFET N-CH 100V 10.3A D2PAK
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 19.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10.3A  ·  Input Capacitance (Ciss) @ Vds: 426pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
Additional information
Find at suppliers
IPI47N10S-33Infineon TechnologiesMOSFET N-CH 100V 47A TO262-3
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 105nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 47A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 175W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
from 0,85Additional information
Find at suppliers
BSP170PE6327TBSP170PE6327TInfineon TechnologiesMOSFET P-CH 60V 1.9A SOT223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.9A  ·  Input Capacitance (Ciss) @ Vds: 410pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
Additional information
Find at suppliers
SPB18P06PSPB18P06PInfineon TechnologiesMOSFET P-CH 60V 18.7A D2PAK
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 18.7A  ·  Input Capacitance (Ciss) @ Vds: 860pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 81.1W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
Additional information
Find at suppliers
BUZ80AInfineon TechnologiesMOSFET N-CH 800V 3.6A TO-220AB
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V  ·  Drain to Source Voltage (Vdss): 800V  ·  Current - Continuous Drain (Id) @ 25° C: 3.6A  ·  Input Capacitance (Ciss) @ Vds: 1350pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
Additional information
Find at suppliers
BSP296 L6433BSP296 L6433Infineon TechnologiesMOSFET N-CH 100V 1.1A SOT-223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 17.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.1A  ·  Input Capacitance (Ciss) @ Vds: 364pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.79W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,29Additional information
Find at suppliers
SPB35N10SPB35N10Infineon TechnologiesMOSFET N-CH 100V 35A D2PAK
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 65nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 1570pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
Additional information
Find at suppliers
BSP125 L6327BSP125 L6327Infineon TechnologiesMOSFET N-CH 600V 120MA SOT-223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 6.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 120mA  ·  Input Capacitance (Ciss) @ Vds: 150pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,55Additional information
Find at suppliers
BSS169 E6327Infineon TechnologiesMOSFET N-CH 100V 170MA SOT-23
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 2.8nC @ 7V  ·  Current - Continuous Drain (Id) @ 25° C: 170mA  ·  Input Capacitance (Ciss) @ Vds: 68pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Depletion Mode  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
Additional information
Find at suppliers
BSP123L6327BSP123L6327Infineon TechnologiesMOSFET N-CH 100V 370MA SOT-223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 370mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 2.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 370mA  ·  Input Capacitance (Ciss) @ Vds: 70pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.79W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,24
from 0,64		Additional information
Find at suppliers
SPP10N10Infineon TechnologiesMOSFET N-CH 100V 10.3A TO-220
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 19.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10.3A  ·  Input Capacitance (Ciss) @ Vds: 426pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
Additional information
Find at suppliers
BUZ31BUZ31Infineon TechnologiesMOSFET N-CH 200V 14.5A TO220AB
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V  ·  Drain to Source Voltage (Vdss): 200V  ·  Current - Continuous Drain (Id) @ 25° C: 14.5A  ·  Input Capacitance (Ciss) @ Vds: 1120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 95W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
from 0,74
from 1,73		Additional information
Find at suppliers
BSS138N E7854Infineon TechnologiesMOSFET N-CH 60V 230MA SOT-23
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 1.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 230mA  ·  Input Capacitance (Ciss) @ Vds: 41pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
Additional information
Find at suppliers
BSS119 L6433Infineon TechnologiesMOSFET N-CH 100V 170MA SOT-23
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 2.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 170mA  ·  Input Capacitance (Ciss) @ Vds: 78pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
from 0,14Additional information
Find at suppliers
BSP125 L6433BSP125 L6433Infineon TechnologiesMOSFET N-CH 600V 120MA SOT-223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 6.6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 120mA  ·  Input Capacitance (Ciss) @ Vds: 150pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
from 0,49Additional information
Find at suppliers
SPB80N06S-08SPB80N06S-08Infineon TechnologiesMOSFET N-CH 55V 80A D2PAK
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 187nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 3660pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
Additional information
Find at suppliers
BSP92P E6327BSP92P E6327Infineon TechnologiesMOSFET P-CH 250V 260MA SOT-223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 12 Ohm @ 260mA, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 5.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 260mA  ·  Input Capacitance (Ciss) @ Vds: 104pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
Additional information
Find at suppliers
SPB80N10L GSPB80N10L GInfineon TechnologiesMOSFET N-CH 100V 80A TO-263
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 14 mOhm @ 58A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 240nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 4540pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
from 1,69
from 3,96		Additional information
Find at suppliers

Search «SPU30P06P» in:  Google   Yahoo   MSN Report an error  

© 2006 — 2024 ChipFind Ltd.
Contact phone, e-mail, ICQ		 Catalog with parameters for 1,401,534 components Register • Advertising