Discrete Semiconductor Products · MOSFETs - Single

BSS119 L6433 — MOSFET N-CH 100V 170MA SOT-23

Manufacturer	Infineon Technologies
Harmful substances	RoHS Lead-free

Series	SIPMOS®
Rds On (Max) @ Id, Vgs	6 Ohm @ 170mA, 10V
Drain to Source Voltage (Vdss)	100V
Gate Charge (Qg) @ Vgs	2.5nC @ 10V
Current - Continuous Drain (Id) @ 25° C	170mA
Input Capacitance (Ciss) @ Vds	78pF @ 25V
FET Polarity	N-Channel
FET Feature	Logic Level Gate
Power - Max	360mW
Mounting Type	Surface Mount
Package / Case	SOT-23
Found under name	SP000247291

Analogous by characteristics

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	BSP613P	Infineon Technologies	MOSFET P-CH 60V 2.9A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.9A · Input Capacitance (Ciss) @ Vds: 875pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers
	BUZ30A L3045A	Infineon Technologies	MOSFET N-CH 200V 21A TO-263 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.5A, 10V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 1900pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 1,27 from 3,05	Additional information Find at suppliers
	BSS131 L6327	Infineon Technologies	MOSFET N-CH 240V .11A SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 14 Ohm @ 100mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 3.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 110mA · Input Capacitance (Ciss) @ Vds: 77pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23	from 0,09	Additional information Find at suppliers
	BSS126 L6327	Infineon Technologies	MOSFET N-CH 600V 21MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 2.1nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 21mA · Input Capacitance (Ciss) @ Vds: 28pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-23	from 0,16	Additional information Find at suppliers
	BSS87 L6327	Infineon Technologies	MOSFET N-CH 240V 260MA SOT-89 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 5.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 260mA · Input Capacitance (Ciss) @ Vds: 97pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-89	from 0,38 from 0,85	Additional information Find at suppliers
	BSP88E6327	Infineon Technologies	MOSFET N-CH 240V 350MA SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 6.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 95pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers
	BSS192PE6327T	Infineon Technologies	MOSFET P-CH 250V 190MA SOT-89 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 6.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 190mA · Input Capacitance (Ciss) @ Vds: 104pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-89		Additional information Find at suppliers
	IPI70N10SL-16	Infineon Technologies	MOSFET N-CH 100V 70A TO262-3 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 4540pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	from 1,24	Additional information Find at suppliers
	SPP18P06P	Infineon Technologies	MOSFET P-CH 60V 18.7A TO-220AB Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18.7A · Input Capacitance (Ciss) @ Vds: 860pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 81.1W · Mounting Type: Through Hole · Package / Case: TO-220AB	from 0,95 from 1,43	Additional information Find at suppliers
	BSP171PE6327T	Infineon Technologies	MOSFET P-CH 60V 1.9A SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 20nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.9A · Input Capacitance (Ciss) @ Vds: 460pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers
	SPD08P06P G	Infineon Technologies	MOSFET P-CH 60V 8.83A TO-252 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.83A · Input Capacitance (Ciss) @ Vds: 420pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 42W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,44 from 0,98	Additional information Find at suppliers
	BSS119 E6433	Infineon Technologies	MOSFET N-CH 100V 170MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 2.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 78pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23		Additional information Find at suppliers
	SPP80N06S-08	Infineon Technologies	MOSFET N-CH 55V 80A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 8 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 187nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3660pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Through Hole · Package / Case: TO-220		Additional information Find at suppliers
	SPP18P06P G	Infineon Technologies	MOSFET P-CH 60V 18.7A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18.7A · Input Capacitance (Ciss) @ Vds: 860pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 81.1W · Mounting Type: Through Hole · Package / Case: TO-220-3	from 0,70	Additional information Find at suppliers
	SPD15P10P G	Infineon Technologies	MOSFET P-CH 100V 15A TO252-3 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 240 mOhm @ 10.6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1280pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 128W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,68	Additional information Find at suppliers
	BUZ73A	Infineon Technologies	MOSFET N-CH 200V 5.5A TO-220AB Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.5A, 10V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 530pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220AB	from 0,49 from 1,23	Additional information Find at suppliers
	SPB47N10L	Infineon Technologies	MOSFET N-CH 100V 47A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 135nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 175W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Additional information Find at suppliers
	BSP296E6327	Infineon Technologies	MOSFET N-CH 100V 1.1A SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 17.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.1A · Input Capacitance (Ciss) @ Vds: 364pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.79W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers
	BUZ31 E3045A	Infineon Technologies	MOSFET N-CH 200V 14.5A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 14.5A · Input Capacitance (Ciss) @ Vds: 1120pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 95W · Mounting Type: Through Hole · Package / Case: TO-220		Additional information Find at suppliers
	BSS138N L6327	Infineon Technologies	MOSFET N-CH 60V 230MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 230mA · Input Capacitance (Ciss) @ Vds: 41pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23	from 0,08 from 0,63	Additional information Find at suppliers
	BUZ73A E3046	Infineon Technologies	MOSFET N-CH 200V 5.5A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.5A, 10V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 5.5A · Input Capacitance (Ciss) @ Vds: 530pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220		Additional information Find at suppliers
	BSP129 L6906	Infineon Technologies	MOSFET N-CH 240V 350MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 5.7nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 108pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers
	SPI80N10L	Infineon Technologies	MOSFET N-CH 100V 80A I2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 14 mOhm @ 58A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4540pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)		Additional information Find at suppliers
	BUZ32 L3045A	Infineon Technologies	MOSFET N-CH 200V 9.5A TO-220AB Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 9.5A · Input Capacitance (Ciss) @ Vds: 530pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 75W · Mounting Type: Through Hole · Package / Case: TO-220AB	from 0,70 from 1,74	Additional information Find at suppliers
	SN7002N E6433	Infineon Technologies	MOSFET N-CH 60V 200MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 45pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23		Additional information Find at suppliers

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