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BSS87E6327T

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BSS87E6327T — MOSFET N-CH 240V 260MA SOT-89

ManufacturerInfineon Technologies
Harmful substancesRoHS   Lead-free
SeriesSIPMOS®
Rds On (Max) @ Id, Vgs6 Ohm @ 260mA, 10V
Drain to Source Voltage (Vdss)240V
Gate Charge (Qg) @ Vgs5.5nC @ 10V
Current - Continuous Drain (Id) @ 25° C260mA
Input Capacitance (Ciss) @ Vds97pF @ 25V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max1W
Mounting TypeSurface Mount
Package / CaseSOT-89
Found under nameBSS87XTINCT
Analogous by characteristics
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Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 240 mOhm @ 10.6A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 1280pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 128W  ·  Mounting Type: Surface Mount  ·  Package / Case: TO-220
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Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Current - Continuous Drain (Id) @ 25° C: 9.5A  ·  Input Capacitance (Ciss) @ Vds: 530pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 75W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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BSP296 E6433BSP296 E6433Infineon TechnologiesMOSFET N-CH 100V 1.1A SOT-223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 17.2nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.1A  ·  Input Capacitance (Ciss) @ Vds: 364pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.79W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BSS84PW L6327Infineon TechnologiesMOSFET P-CH 60V 150MA SOT-323
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 1.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 150mA  ·  Input Capacitance (Ciss) @ Vds: 19.1pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-323
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IPP47N10SL-26Infineon TechnologiesMOSFET N-CH 100V 47A TO220-3
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 135nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 47A  ·  Input Capacitance (Ciss) @ Vds: 2500pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 175W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220-3
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BSS87E6327BSS87E6327Infineon TechnologiesMOSFET N-CH 240V 260MA SOT-89
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V  ·  Drain to Source Voltage (Vdss): 240V  ·  Gate Charge (Qg) @ Vgs: 5.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 260mA  ·  Input Capacitance (Ciss) @ Vds: 97pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-89
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Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.7A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 1.7A  ·  Input Capacitance (Ciss) @ Vds: 550pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.8A  ·  Input Capacitance (Ciss) @ Vds: 420pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 42W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V  ·  Drain to Source Voltage (Vdss): 200V  ·  Current - Continuous Drain (Id) @ 25° C: 14.5A  ·  Input Capacitance (Ciss) @ Vds: 1120pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 95W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 2.67nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 170mA  ·  Input Capacitance (Ciss) @ Vds: 69pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 1.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 200mA  ·  Input Capacitance (Ciss) @ Vds: 45pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 4.9nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 120mA  ·  Input Capacitance (Ciss) @ Vds: 146pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Depletion Mode  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BSP317P L6327BSP317P L6327Infineon TechnologiesMOSFET P-CH 250V 430MA SOT-223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 4 Ohm @ 430mA, 10V  ·  Drain to Source Voltage (Vdss): 250V  ·  Gate Charge (Qg) @ Vgs: 15.1nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 430mA  ·  Input Capacitance (Ciss) @ Vds: 262pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 8 mOhm @ 80A, 10V  ·  Drain to Source Voltage (Vdss): 55V  ·  Gate Charge (Qg) @ Vgs: 187nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 80A  ·  Input Capacitance (Ciss) @ Vds: 3660pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 300W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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BSR315P L6327Infineon TechnologiesMOSFET P-CH 60V 620MA SC-59
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 800 mOhm @ 620mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 620mA  ·  Input Capacitance (Ciss) @ Vds: 176pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SC-59
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BSS83PE6327BSS83PE6327Infineon TechnologiesMOSFET P-CH 60V 330MA SOT-23
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 2 Ohm @ 330mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 3.57nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 330mA  ·  Input Capacitance (Ciss) @ Vds: 78pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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SPB10N10LSPB10N10LInfineon TechnologiesMOSFET N-CH 100V 10.3A D2PAK
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 154 mOhm @ 8.1A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 22nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 10.3A  ·  Input Capacitance (Ciss) @ Vds: 444pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BUZ73BUZ73Infineon TechnologiesMOSFET N-CH 200V 7A TO-220AB
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 530pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 40W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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BSS84P-E6327BSS84P-E6327Infineon TechnologiesMOSFET P-CH 60V 170MA SOT-23
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 1.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 170mA  ·  Input Capacitance (Ciss) @ Vds: 19pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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BSP316PE6327BSP316PE6327Infineon TechnologiesMOSFET P-CH 100V 680MA SOT223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 680mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 6.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 680mA  ·  Input Capacitance (Ciss) @ Vds: 146pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BSS138N-E6327BSS138N-E6327Infineon TechnologiesMOSFET N-CH 60V 230MA SOT-23
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 1.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 230mA  ·  Input Capacitance (Ciss) @ Vds: 41pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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BSS138W E6433BSS138W E6433Infineon TechnologiesMOSFET N-CH 60V 280MA SOT-323
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 1.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 280mA  ·  Input Capacitance (Ciss) @ Vds: 43pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-323
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