Discrete Semiconductor Products · MOSFETs - Single

SPB80N06S-08 — MOSFET N-CH 55V 80A D2PAK

Manufacturer	Infineon Technologies

Series	SIPMOS®
Rds On (Max) @ Id, Vgs	7.7 mOhm @ 80A, 10V
Drain to Source Voltage (Vdss)	55V
Gate Charge (Qg) @ Vgs	187nC @ 10V
Current - Continuous Drain (Id) @ 25° C	80A
Input Capacitance (Ciss) @ Vds	3660pF @ 25V
FET Polarity	N-Channel
FET Feature	Standard
Power - Max	300W
Mounting Type	Surface Mount
Package / Case	D²Pak, TO-263 (2 leads + tab)
Found under name	SP000054056, SPB80N06S08T

Analogous by characteristics

Photo	Name	Manufacturer	Technical parameters	Prices (rub.)	Buy
	BSS84P L6433	Infineon Technologies	MOSFET P-CH 60V 170MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 19pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23	from 0,05	Additional information Find at suppliers
	BSP135 L6327	Infineon Technologies	MOSFET N-CH 600V 120MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 4.9nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 120mA · Input Capacitance (Ciss) @ Vds: 146pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	from 0,74	Additional information Find at suppliers
	BSP129 L6327	Infineon Technologies	MOSFET N-CH 240V 350MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 5.7nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 350mA · Input Capacitance (Ciss) @ Vds: 108pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA	from 0,33	Additional information Find at suppliers
	SPP10N10L	Infineon Technologies	MOSFET N-CH 100V 10.3A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 154 mOhm @ 8.1A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10.3A · Input Capacitance (Ciss) @ Vds: 444pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220		Additional information Find at suppliers
	SPB35N10 G	Infineon Technologies	MOSFET N-CH 100V 35A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 65nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 1570pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)		Additional information Find at suppliers
	BSP317PE6327	Infineon Technologies	MOSFET P-CH 250V 430MA SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 4 Ohm @ 430mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 15.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 430mA · Input Capacitance (Ciss) @ Vds: 262pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers
	BSP295E6327	Infineon Technologies	MOSFET N-CH 60V 1.8A SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 17nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.8A · Input Capacitance (Ciss) @ Vds: 368pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers
	BSS225	Infineon Technologies	MOSFET N-CH 600V 90MA SOT-89 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 45 Ohm @ 90mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 5.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 90mA · Input Capacitance (Ciss) @ Vds: 131pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-89		Additional information Find at suppliers
	IPB47N10S-33	Infineon Technologies	MOSFET N-CH 100V 47A TO263-3 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 105nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 175W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 0,78	Additional information Find at suppliers
	BUZ31L	Infineon Technologies	MOSFET N-CH 200V 13.5A TO220AB Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 7A, 5V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 13.5A · Input Capacitance (Ciss) @ Vds: 1600pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 95W · Mounting Type: Through Hole · Package / Case: TO-220AB	from 0,82 from 1,90	Additional information Find at suppliers
	BSS139 E6327	Infineon Technologies	MOSFET N-CH 250V 100MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 14 Ohm @ 0.1mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 3.5nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 100mA · Input Capacitance (Ciss) @ Vds: 76pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23		Additional information Find at suppliers
	SPD04P10PL G	Infineon Technologies	MOSFET P-CH 100V 4.2A TO252-3 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 850 mOhm @ 3A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 16nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 4.2A · Input Capacitance (Ciss) @ Vds: 372pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 38W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63	from 0,28	Additional information Find at suppliers
	SPU11N10	Infineon Technologies	MOSFET N-CH 100V 10.5A IPAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 18.3nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10.5A · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)		Additional information Find at suppliers
	SPP15P10PL G	Infineon Technologies	MOSFET P-CH 100V 15A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 11.3A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 62nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1490pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 128W · Mounting Type: Through Hole · Package / Case: TO-220	from 0,75	Additional information Find at suppliers
	SPB10N10L G	Infineon Technologies	MOSFET N-CH 100V 10.3A TO-263 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 154 mOhm @ 8.1A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 22nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10.3A · Input Capacitance (Ciss) @ Vds: 444pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 0,65 from 1,48	Additional information Find at suppliers
	BSP320S E6433	Infineon Technologies	MOSFET N-CH 60V 2.9A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 120 mOhm @ 2.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.9A · Input Capacitance (Ciss) @ Vds: 340pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers
	SPI21N10	Infineon Technologies	MOSFET N-CH 100V 21A TO-262 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 38.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 865pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab)	from 0,79 from 1,84	Additional information Find at suppliers
	SPD30P06P	Infineon Technologies	MOSFET P-CH 60V 30A DPAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 75 mOhm @ 21.5A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1535pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63		Additional information Find at suppliers
	BSP125 E6327	Infineon Technologies	MOSFET N-CH 600V 120MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 6.6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 120mA · Input Capacitance (Ciss) @ Vds: 150pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers
	IPB70N10SL-16	Infineon Technologies	MOSFET N-CH 100V 70A TO263-3 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 4540pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab)	from 1,13	Additional information Find at suppliers
	IPP70N10SL-16	Infineon Technologies	MOSFET N-CH 100V 70A TO220-3 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 4540pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: TO-220-3	from 1,24	Additional information Find at suppliers
	BSP298 E6327	Infineon Technologies	MOSFET N-CH 400V 500MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 400V · Current - Continuous Drain (Id) @ 25° C: 500mA · Input Capacitance (Ciss) @ Vds: 400pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers
	SPP15P10P G	Infineon Technologies	MOSFET P-CH 100V 15A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 240 mOhm @ 10.6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 48nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1280pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 128W · Mounting Type: Surface Mount · Package / Case: TO-220	from 0,83	Additional information Find at suppliers
	BUZ32	Infineon Technologies	MOSFET N-CH 200V 9.5A TO220AB Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 9.5A · Input Capacitance (Ciss) @ Vds: 530pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 75W · Mounting Type: Through Hole · Package / Case: TO-220AB	from 0,70 from 1,74	Additional information Find at suppliers
	BSP296 E6433	Infineon Technologies	MOSFET N-CH 100V 1.1A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 17.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.1A · Input Capacitance (Ciss) @ Vds: 364pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.79W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA		Additional information Find at suppliers

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