Log in Register |
Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
![]() | BSP296 L6327 | Infineon Technologies | MOSFET N-CH 100V 1.1A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 17.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.1A · Input Capacitance (Ciss) @ Vds: 364pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.79W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,63 from 0,94 | Additional information Find at suppliers |
![]() | SPU18P06P | Infineon Technologies | MOSFET P-CH 60V 18.6A TO-251 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18.6A · Input Capacitance (Ciss) @ Vds: 860pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 80W · Mounting Type: Through Hole · Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab) | from 0,54 from 1,35 | Additional information Find at suppliers |
BSS123 E7874 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 2.67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 69pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | Additional information Find at suppliers | ||
![]() | SPP70N10L | Infineon Technologies | MOSFET N-CH 100V 70A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 4540pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Through Hole · Package / Case: TO-220 | Additional information Find at suppliers | |
![]() | BSS87E6327T | Infineon Technologies | MOSFET N-CH 240V 260MA SOT-89 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 5.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 260mA · Input Capacitance (Ciss) @ Vds: 97pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-89 | from 0,38 from 0,84 | Additional information Find at suppliers |
![]() | BSS192PE6327 | Infineon Technologies | MOSFET P-CH 250V 190MA SOT-89 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 12 Ohm @ 190mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 6.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 190mA · Input Capacitance (Ciss) @ Vds: 104pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1W · Mounting Type: Surface Mount · Package / Case: SOT-89 | Additional information Find at suppliers | |
![]() | BSP613P L6327 | Infineon Technologies | MOSFET P-CH 60V 2.9A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 2.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 33nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2.9A · Input Capacitance (Ciss) @ Vds: 875pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,56 from 1,27 | Additional information Find at suppliers |
![]() | SPB10N10 G | Infineon Technologies | MOSFET N-CH 100V 10.3A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 19.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10.3A · Input Capacitance (Ciss) @ Vds: 426pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | |
IPI47N10S-33 | Infineon Technologies | MOSFET N-CH 100V 47A TO262-3 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 105nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 175W · Mounting Type: Through Hole · Package / Case: I²Pak, TO-262 (3 straight leads + tab) | from 0,85 | Additional information Find at suppliers | |
![]() | BSP170PE6327T | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.9A · Input Capacitance (Ciss) @ Vds: 410pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
![]() | SPB18P06P | Infineon Technologies | MOSFET P-CH 60V 18.7A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 130 mOhm @ 13.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 28nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 18.7A · Input Capacitance (Ciss) @ Vds: 860pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 81.1W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | |
BUZ80A | Infineon Technologies | MOSFET N-CH 800V 3.6A TO-220AB Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V · Drain to Source Voltage (Vdss): 800V · Current - Continuous Drain (Id) @ 25° C: 3.6A · Input Capacitance (Ciss) @ Vds: 1350pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-220AB | Additional information Find at suppliers | ||
![]() | BSP296 L6433 | Infineon Technologies | MOSFET N-CH 100V 1.1A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 700 mOhm @ 1.1A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 17.2nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.1A · Input Capacitance (Ciss) @ Vds: 364pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.79W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,29 | Additional information Find at suppliers |
![]() | SPB35N10 | Infineon Technologies | MOSFET N-CH 100V 35A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 65nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 1570pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | |
![]() | BSP125 L6327 | Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 6.6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 120mA · Input Capacitance (Ciss) @ Vds: 150pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,55 | Additional information Find at suppliers |
BSS169 E6327 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 2.8nC @ 7V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 68pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | Additional information Find at suppliers | ||
![]() | BSP123L6327 | Infineon Technologies | MOSFET N-CH 100V 370MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 370mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 2.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 370mA · Input Capacitance (Ciss) @ Vds: 70pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.79W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,24 from 0,64 | Additional information Find at suppliers |
SPP10N10 | Infineon Technologies | MOSFET N-CH 100V 10.3A TO-220 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 170 mOhm @ 7.8A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 19.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 10.3A · Input Capacitance (Ciss) @ Vds: 426pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 50W · Mounting Type: Through Hole · Package / Case: TO-220 | Additional information Find at suppliers | ||
![]() | BUZ31 | Infineon Technologies | MOSFET N-CH 200V 14.5A TO220AB Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 200 mOhm @ 9A, 5V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 14.5A · Input Capacitance (Ciss) @ Vds: 1120pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 95W · Mounting Type: Through Hole · Package / Case: TO-220AB | from 0,74 from 1,73 | Additional information Find at suppliers |
BSS138N E7854 | Infineon Technologies | MOSFET N-CH 60V 230MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 230mA · Input Capacitance (Ciss) @ Vds: 41pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | Additional information Find at suppliers | ||
BSS119 L6433 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 2.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 78pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,14 | Additional information Find at suppliers | |
![]() | BSP125 L6433 | Infineon Technologies | MOSFET N-CH 600V 120MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 6.6nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 120mA · Input Capacitance (Ciss) @ Vds: 150pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,49 | Additional information Find at suppliers |
![]() | SPB80N06S-08 | Infineon Technologies | MOSFET N-CH 55V 80A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V · Drain to Source Voltage (Vdss): 55V · Gate Charge (Qg) @ Vgs: 187nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 3660pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 300W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | |
![]() | BSP92P E6327 | Infineon Technologies | MOSFET P-CH 250V 260MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 12 Ohm @ 260mA, 10V · Drain to Source Voltage (Vdss): 250V · Gate Charge (Qg) @ Vgs: 5.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 260mA · Input Capacitance (Ciss) @ Vds: 104pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
![]() | SPB80N10L G | Infineon Technologies | MOSFET N-CH 100V 80A TO-263 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 14 mOhm @ 58A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 240nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 4540pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 250W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 1,69 from 3,96 | Additional information Find at suppliers |
© 2006 — 2024 ChipFind Ltd. Contact phone, e-mail, ICQ |
Catalog with parameters for 1,401,534 components | Register • Advertising |