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NTMS10P02R2 — MOSFET P-CH 20V 8.8A 8-SOIC

Manufacturer: ON Semiconductor  •  Please note: Wire Change 20 aug 2008  •  Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 4.5V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 70nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 8.8A  •  Input Capacitance (Ciss) @ Vds: 3640pF @ 16V  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.6W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)  •  Other PartNo: NTMS10P02R2OSTR
Datasheet
Cross-referenceSTS10PF30L   Technical Specification »

   


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    SupplierPart NoManufacturerPriceStock
    RadioElementVBA2311, P-Channel 30-V (D-S) MOSFET аналог NTMS10P02R2G
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    Company Information

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    BETTLINK ELECTRONIC LIMITED0  0 Hide
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    King-YiKu Optoelectronics Co., Ltd.0  0 Hide
    RYX ELECTRONIC LIMITED0  0 Hide
    XПро-активMoscow+7 (+7) 92647256700  0 Hide
    Yee Hing Technology Co., Limit0  0 Hide
    ZEALAN ELECTRONICS (HK) INT'L LIMITED0  0 Hide
    ASOURCING ELECTRONICSMoscow+7 (495) 78404800  0 Hide
    Delta ElectronicsMoscow+7 (495) 660-36-02, Fax: (495) 660-36-029  11 Hide
    Voronez+7 (473) 239-22-22
    SolovievMoscow+7 (495) 792-06-990  4 Hide
    AN-CHIPSt. Petersburg+7 (812) 922-25-390  0 Hide
    ООО "Аркион"St. Petersburg+7 (8) 91108395220  0 Hide
    AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
    ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
    RadioElementSt. Petersburg+7 (812) 565-06-520  0 Hide
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