Features

NTMS10P02R2 — MOSFET P-CH 20V 8.8A 8-SOIC

Manufacturer: ON Semiconductor  •  Please note: Wire Change 20 aug 2008  •  Rds On (Max) @ Id, Vgs: 14 mOhm @ 10A, 4.5V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 70nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 8.8A  •  Input Capacitance (Ciss) @ Vds: 3640pF @ 16V  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.6W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)  •  Other PartNo: NTMS10P02R2OSTR
Datasheet
Cross-referenceSTS10PF30L   Technical Specification »

Suppliers of «NTMS10P02R2»

Part NoManufacturerPriceStock
Delta ElectronicsVBA2311, P-Channel 30-V (D-S) MOSFET аналог NTMS10P02R2G–30.76 RUB20
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Delta ElectronicsVBA2216, 1 P-Channel 20-V (D-S) MOSFET аналог NTMS10P02R2G–38.95 RUB20
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AN-CHIPFresh data!NTMS10P02R2G (микросхема интегральная электронная MOSFET P-CH 20V 8.8A 8-SOIC 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)ON Semiconductor–25701
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