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STI25NM60ND — MOSFET N-CH 600V 21A I2PAK

Manufacturer: STMicroelectronics  •  RoHS/pb-free: RoHS   Pb-free  •  Series: FDmesh™  •  Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V  •  Drain to Source Voltage (Vdss): 600V  •  Gate Charge (Qg) @ Vgs: 80nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 21A  •  Input Capacitance (Ciss) @ Vds: 2400pF @ 50V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 160W  •  Mounting Type: Through Hole  •  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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Suppliers of «STI25NM60ND»

SupplierPart NoManufacturerPriceStock
Geefook (shenzhen) Electronic Co., LtdSTI25NM60ND
Подробнее
STMicroelectronics 35000
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!STI25NM60ND
Package: : TO-262; , D/c: : 22+
ST 55000
Digi-ic_SMART PIONEER ElectronicFresh data!STI25NM60ND
MOSFET N-CH 600V 21A I2PAK Подробнее
STMicroelectronics 162244


Company Information

CompanyOfficePhoneE-mailFeedback 
Digi-ic_SMART PIONEER ElectronicHong Kong(86) 135123388010  0 Hide
ShenZhen(86) 0755-82535750
Geefook (shenzhen) Electronic Co., LtdShenZhen(86) 152200899930  0 Hide
HongKong Teyou Huicheng Electronic Technology LimitedShenZhen(86) 18938853596, Fax: (0755) 825698150  0 Hide
AN-CHIP0  0 Hide
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ООО "Интегральные схемы"0  0 Hide
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