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STI25NM60ND
— MOSFET N-CH 600V 21A I2PAK
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: STMicroelectronics
•
RoHS/pb-free:
RoHS
Pb-free
•
Series: FDmesh™
•
Rds On (Max) @ Id, Vgs: 160 mOhm @ 10.5A, 10V
•
Drain to Source Voltage (Vdss): 600V
•
Gate Charge (Qg) @ Vgs: 80nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 21A
•
Input Capacitance (Ciss) @ Vds: 2400pF @ 50V
•
FET Polarity: N-Channel
•
FET Feature: Logic Level Gate
•
Power - Max: 160W
•
Mounting Type: Through Hole
•
Package / Case: I²Pak, TO-262 (3 straight leads + tab)
Datasheet
stf25nm60nd.pdf
on site st.com
Manufacturers
ST
STMicroelectronics
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AN-CHIP
STI25NM60ND
микросхема интегральная электронная MOSFET N-CH 600V 21A I2PAK 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21
STMicroelectronics
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