Manufacturer: Infineon Technologies  •  Series: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V  •  Drain to Source Voltage (Vdss): 55V  •  Gate Charge (Qg) @ Vgs: 187nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 80A  •  Input Capacitance (Ciss) @ Vds: 3660pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 300W  •  Mounting Type: Surface Mount  •  Package / Case: D²Pak, TO-263 (2 leads + tab)  •  Other PartNo: SP000054056, SPB80N06S08T