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SI4463BDY-T1-E3 — MOSFET P-CH 20V 9.8A 8-SOIC

Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 11 mOhm @ 13.7A, 10V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 56nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 9.8A  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.5W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)  •  Other PartNo: SI4463BDY-T1-E3DKR
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EK-KomponentFresh data!Si4463BDY-T1-E3Vishay 3956
ООО "Интегральные схемы"SI4463BDY-T1-E3 from 7 days
AspectSI4463BDY-T1-E3 from 7 days


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