Features

SI4463BDY-T1-E3 — MOSFET P-CH 20V 9.8A 8-SOIC

Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 11 mOhm @ 13.7A, 10V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 56nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 9.8A  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.5W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)  •  Other PartNo: SI4463BDY-T1-E3DKR
Datasheet

Suppliers of «SI4463BDY-T1-E3»

Part NoManufacturerPriceStock
Digi-ic_SMART PIONEER ElectronicFresh data!SI4463BDY-T1-E3 (MOSFET P-CH 20V 9.8A 8SO Подробнее)Vishay Siliconix–132141
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!SI4463BDY-T1-E3 (Package: : SOP-8; , D/c: : 22+)VISHAY/–45000
HK CARLACCI TRADING CO.,LIMITEDFresh data!SI4463BDY-T1-E3 (Package: : SOIC-8_)Vishay–6126
Icseek Global LimitedSI4463BDY-T1-E3 (Оригинальный и наличный и новый)VISHAY–5249
IC STOCK TECHNOLOGY LIMITEDSI4463BDY-T1-E3 (D/c: : 17+)VISHAY–4132
EK-KomponentFresh data!Si4463BDY-T1-E3Vishay–3956
YUHUA TECHNOLOGYFresh data!SI4463BDY-T1-E3 (China HongKong - 3 days; , Package: : SOP8; , D/c: : 21+)VISHAY–2500
King-YiKu Optoelectronics Co., Ltd.SI4463BDY-T1-E3 (22+; , D/c: : 3500)VISHAY()8$–
AspectSI4463BDY-T1-E3––from 7 days
ООО "Интегральные схемы"SI4463BDY-T1-E3––from 7 days