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IPP80N06S2L-H5 — MOSFET N-CH 55V 80A TO220-3

Manufacturer: Infineon Technologies  •  RoHS/pb-free: RoHS   Pb-free  •  Series: OptiMOS™  •  Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V  •  Drain to Source Voltage (Vdss): 55V  •  Gate Charge (Qg) @ Vgs: 190nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 80A  •  Input Capacitance (Ciss) @ Vds: 5000pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 300W  •  Mounting Type: Through Hole  •  Package / Case: TO-220  •  Other PartNo: SP000219067
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Suppliers of «IPP80N06S2L-H5»

SupplierPart NoManufacturerPriceStock
ООО "Интегральные схемы"IPP80N06S2L-H5 from 7 days
AspectIPP80N06S2L-H5 from 7 days
EK-KomponentFresh data!IPP80N06S2L-H5Infineon Technologies AG 1916
AN-CHIPFresh data!IPP80N06S2L-H5
микросхема интегральная электронная MOSFET N-CH 55V 80A TO220-3 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21
Infineon Technologies (IR) 33633


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Digi-ic_SMART PIONEER Electronic0  0 Hide
Icseek Global Limited0  0 Hide
AN-CHIPSt. Petersburg+7 (812) 922-25-390  0 Hide
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
EK-KomponentMoscow+7 (495) 849514250300  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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