Features

IPP80N06S2L-H5 — MOSFET N-CH 55V 80A TO220-3

Manufacturer: Infineon Technologies  •  RoHS/pb-free: RoHS   Pb-free  •  Series: OptiMOS™  •  Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V  •  Drain to Source Voltage (Vdss): 55V  •  Gate Charge (Qg) @ Vgs: 190nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 80A  •  Input Capacitance (Ciss) @ Vds: 5000pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 300W  •  Mounting Type: Through Hole  •  Package / Case: TO-220  •  Other PartNo: SP000219067
Datasheet

Suppliers of «IPP80N06S2L-H5»

Part NoManufacturerPriceStock
Icseek Global Limited, ShenZhen
(86755) 83000080（10）, Fax: (86755) 830080（908）, sales5@icseek.net
IPP80N06S2L-H5 (Оригинальный и наличный и новый)INFINEON–5246
IPP80N06S2LH5AKSA2 (Оригинальный и наличный и новый)INFINEON–5246
EK-Komponent, Moscow
+7 (495) 84951425030, ek-komponent@mail.ru
IPP80N06S2L-H5Infineon Technologies AG–1916
Digi-ic_SMART PIONEER Electronic, Hong Kong
(86) 13512338801, sales8@digi-ic.com
IPP80N06S2LH5AKSA2 (MOSFET N-CH 55V 80A TO220-3-1 Подробнее)Infineon Technologies–137618
IPP80N06S2LH5AKSA1 (MOSFET N-CH 55V 80A TO220-3 Подробнее)Infineon Technologies–162557
AN-CHIP, St. Petersburg
+7 (812) 922-25-39, order@an-chip.ru
IPP80N06S2L-H5 (микросхема интегральная электронная MOSFET N-CH 55V 80A TO220-3 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21)Infineon Technologies (IR)–33633
ООО "Интегральные схемы", St. Petersburg
+7 (812) 448-53-82, info@ic-ltd.ru
IPP80N06S2L-H5––from 7 days
Aspect, St. Petersburg
+7 (812) 309-89-32, info@aspect.spb.su
IPP80N06S2L-H5––from 7 days