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RJK0354DSP-00#J0

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RJK0354DSP-00#J0 — MOSFET N-CH 30V 16A 8-SOP

ManufacturerRenesas Technology America
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs7 mOhm @ 8A, 10V
Drain to Source Voltage (Vdss)30V
Gate Charge (Qg) @ Vgs12nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C16A
Input Capacitance (Ciss) @ Vds1740pF @ 10V
FET PolarityN-Channel
FET FeatureStandard
Power - Max2W
Mounting TypeSurface Mount
Package / Case8-SOP
Found under nameRJK0354DSP-00#J0CT
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
RJK0393DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 40A W-PAK
Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 3270pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 40W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT1072HRenesas Technology AmericaMOSFET P-CH 30V 40A 5LFPAK
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 155nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 9500pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: 5LFPAK
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HAT2140H-EL-ERenesas Technology AmericaMOSFET N-CH 100V 25A 5LFPAK
Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.5A, 10v  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 105nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 6500pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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RJK0369DSP-00#J0RJK0369DSP-00#J0Renesas Technology AmericaMOSFET N-CH 30V 9A 8-SOP
Rds On (Max) @ Id, Vgs: 15.6 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 5.6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 810pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
from 0,36
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RJK0353DPA-00#J0RJK0353DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 35A WPAK
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 2180pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 40W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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FS30AS-2-T13Renesas Technology AmericaMOSFET N-CH 100V 30A MP-3
Rds On (Max) @ Id, Vgs: 100 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1250pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 35W  ·  Mounting Type: Surface Mount  ·  Package / Case: MP-3A
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RJK0353DSP-00#J0RJK0353DSP-00#J0Renesas Technology AmericaMOSFET N-CH 30V 18A 8-SOP
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 15nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 2180pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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FS70VSJ-06F-T11Renesas Technology AmericaMOSFET N-CH 60V 70A TO-220S
Rds On (Max) @ Id, Vgs: 7 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 8500pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220S
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HAT2197R-EL-EHAT2197R-EL-ERenesas Technology AmericaMOSFET N-CH 30V 16A 8SOP
Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 2650pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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RJK0303DPB-00#J0Renesas Technology AmericaMOSFET N-CH 30V 40A 5-LFPAK
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 3300pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 55W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2141H-EL-ERenesas Technology AmericaMOSFET N-CH 100V 15A 5LFPAK
Rds On (Max) @ Id, Vgs: 27.5 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 46nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 3200pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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RJK0305DPB-00#J0RJK0305DPB-00#J0Renesas Technology AmericaMOSFET N-CH 30V 30A LFPAK
Rds On (Max) @ Id, Vgs: 8 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 8nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1250pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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RJK03C0DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 70A W-PAK
Drain to Source Voltage (Vdss): 30V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2197RHAT2197RRenesas Technology AmericaMOSFET N-CH 30V 16A 8-SOP
Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 2650pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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2SJ77Renesas Technology AmericaMOSFET P-CH 160V 0.5A TO-220
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 500mA  ·  Input Capacitance (Ciss) @ Vds: 120pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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RJK0348DSP-00#J0RJK0348DSP-00#J0Renesas Technology AmericaMOSFET N-CH 30V 22A 8-SOP
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 11A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 34nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 22A  ·  Input Capacitance (Ciss) @ Vds: 5100pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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FS70SM-06Renesas Technology AmericaMOSFET N-CH 60V 70A TO-3P
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 6540pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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HAT2169HRenesas Technology AmericaMOSFET N-CH 40V 50A 5FLPAK
Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 45nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 6650pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2167HRenesas Technology AmericaMOSFET N-CH 30V 40A LFPAK
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 2700pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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RJK0397DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 30A W-PAK
Rds On (Max) @ Id, Vgs: 10.1 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1110pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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RJK0346DPA-00#J0RJK0346DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 65A WPAK
Rds On (Max) @ Id, Vgs: 2 mOhm @ 32.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 49nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  Input Capacitance (Ciss) @ Vds: 7650pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 65W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2172NRenesas Technology AmericaMOSFET N-CH 40V 30A LFPAK-I
Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 2420pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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HAT2164H-EL-ERenesas Technology AmericaMOSFET N-CH 30V 60A 5LFPAK
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2164HRenesas Technology AmericaMOSFET N-CH 30V 60A LFPAK
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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2SK1058-ERenesas Technology AmericaMOSFET N-CH 160V 7A TO-3P
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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