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Discrete Semiconductor Products  ·  MOSFETs - Single
 

HAT2140H-EL-E — MOSFET N-CH 100V 25A 5LFPAK

ManufacturerRenesas Technology America
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs16 mOhm @ 12.5A, 10v
Drain to Source Voltage (Vdss)100V
Gate Charge (Qg) @ Vgs105nC @ 10V
Current - Continuous Drain (Id) @ 25° C25A
Input Capacitance (Ciss) @ Vds6500pF @ 10V
FET PolarityN-Channel
FET FeatureStandard
Power - Max30W
Mounting TypeSurface Mount
Package / CaseLFPAK
Analogous by characteristics
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FS70UM-2Renesas Technology AmericaMOSFET N-CH 100V 70A TO-220
Rds On (Max) @ Id, Vgs: 20 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 6540pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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2SJ162Renesas Technology AmericaMOSFET P-CH 160V 7A TO-3P
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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HAT2266HRenesas Technology AmericaMOSFET N-CH 60V 30A 5LFPAK
Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 3600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 23W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2199R-EL-EHAT2199R-EL-ERenesas Technology AmericaMOSFET N-CH 30V 11A 8SOP
Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 7.5nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1060pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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RJK0365DPA-00#J0RJK0365DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 30A WPAK
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 7.6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1180pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2088R-EL-EHAT2088R-EL-ERenesas Technology AmericaMOSFET N-CH 200V 2A 8SOP
Rds On (Max) @ Id, Vgs: 440 mOhm @ 1A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 450pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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HAT2183WPRenesas Technology AmericaMOSFET N-CH 150V 20A 8WPAK
Rds On (Max) @ Id, Vgs: 64 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 150V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 1200pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2208RHAT2208RRenesas Technology AmericaMOSFET N-CH 30V 9A 8-SOP
Rds On (Max) @ Id, Vgs: 24 mOhm @ 4.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 4.4nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 9A  ·  Input Capacitance (Ciss) @ Vds: 630pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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HAT2200RHAT2200RRenesas Technology AmericaMOSFET N-CH 100V 8A 8-SOP
Rds On (Max) @ Id, Vgs: 28 mOhm @ 4A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 2300pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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RJK0391DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 50A W-PAK
Drain to Source Voltage (Vdss): 30V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2099H-EL-ERenesas Technology AmericaMOSFET N-CH 30V 50A LFPAK
Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 75nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 4750pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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RJK0366DPA-00#J0RJK0366DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 25A WPAK
Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 12.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 1010pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2166HRenesas Technology AmericaMOSFET N-CH 30V 45A LFPAK
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 4400pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2199WPRenesas Technology AmericaMOSFET N-CH 30V 15A WPAK
Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 7.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 10W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2198WPRenesas Technology AmericaMOSFET N-CH 30V 25A WPAK
Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 15W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2208WPRenesas Technology AmericaMOSFET N-CH 30V 12A WPAK
Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 1.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 5W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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RJK0366DSP-00#J0RJK0366DSP-00#J0Renesas Technology AmericaMOSFET N-CH 30V 11A 8-SOP
Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 5.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.8nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 11A  ·  Input Capacitance (Ciss) @ Vds: 1010pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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RJK03B8DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 30A W-PAK
Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 9nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1330pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 28W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2173HRenesas Technology AmericaMOSFET N-CH 100V 25A LFPAK
Rds On (Max) @ Id, Vgs: 15 mOhm @ 12.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 61nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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RJK0330DPB-00#J0RJK0330DPB-00#J0Renesas Technology AmericaMOSFET N-CH 30V 45A LFPAK
Rds On (Max) @ Id, Vgs: 2.7 mOhm @ 22.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 4300pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 55W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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2SK2315TYTR-ERenesas Technology AmericaMOSFET N-CH 60V 2A 4-UPAK
Rds On (Max) @ Id, Vgs: 450 mOhm @ 1A, 4V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 2A  ·  Input Capacitance (Ciss) @ Vds: 173pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: UPAK
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HAT2279N-EL-ERenesas Technology AmericaMOSFET N-CH 80V 30A 5LFPAK
Rds On (Max) @ Id, Vgs: 12.3 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 3520pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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RJK0354DSP-00#J0RJK0354DSP-00#J0Renesas Technology AmericaMOSFET N-CH 30V 16A 8-SOP
Rds On (Max) @ Id, Vgs: 7 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 12nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 1740pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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RJK0355DSP-00#J0RJK0355DSP-00#J0Renesas Technology AmericaMOSFET N-CH 30V 12A 8-SOP
Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 12A  ·  Input Capacitance (Ciss) @ Vds: 860pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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HAT2195R-EL-EHAT2195R-EL-ERenesas Technology AmericaMOSFET N-CH 30V 18A 8-SOP
Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 23nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 3400pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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