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FS30AS-2-T13 — MOSFET N-CH 100V 30A MP-3

ManufacturerRenesas Technology America
Rds On (Max) @ Id, Vgs100 mOhm @ 15A, 10V
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C30A
Input Capacitance (Ciss) @ Vds1250pF @ 10V
FET PolarityN-Channel
FET FeatureStandard
Power - Max35W
Mounting TypeSurface Mount
Package / CaseMP-3A
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HAT2167HRenesas Technology AmericaMOSFET N-CH 30V 40A LFPAK
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 2700pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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RJK0397DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 30A W-PAK
Rds On (Max) @ Id, Vgs: 10.1 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1110pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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RJK0346DPA-00#J0RJK0346DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 65A WPAK
Rds On (Max) @ Id, Vgs: 2 mOhm @ 32.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 49nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  Input Capacitance (Ciss) @ Vds: 7650pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 65W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2172NRenesas Technology AmericaMOSFET N-CH 40V 30A LFPAK-I
Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 2420pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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HAT2164H-EL-ERenesas Technology AmericaMOSFET N-CH 30V 60A 5LFPAK
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2164HRenesas Technology AmericaMOSFET N-CH 30V 60A LFPAK
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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2SK1058-ERenesas Technology AmericaMOSFET N-CH 160V 7A TO-3P
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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RJK03B9DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 30A W-PAK
Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1110pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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FS70SM-06#B00Renesas Technology AmericaMOSFET N-CH 60V 70A TO-3P
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 35A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 6540pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 150W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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HAT2174HRenesas Technology AmericaMOSFET N-CH 100V 20A 5LFPAK
Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 33.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 2280pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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RJK0332DPB-00#J0RJK0332DPB-00#J0Renesas Technology AmericaMOSFET N-CH 30V 35A LFPAK
Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 14nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 2180pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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RJK0328DPB-00#J0RJK0328DPB-00#J0Renesas Technology AmericaMOSFET N-CH 30V 60A LFPAK
Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 42nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 6380pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 65W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2168HRenesas Technology AmericaMOSFET N-CH 30V 30A LFPAK
Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1730pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 15W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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2SK214Renesas Technology AmericaMOSFET N-CH 160V 500MA TO-220AB
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 500mA  ·  Input Capacitance (Ciss) @ Vds: 90pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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HAT2201RHAT2201RRenesas Technology AmericaMOSFET N-CH 100V 6A 8-SOP
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1450pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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2SK2221-ERenesas Technology AmericaMOSFET N-CH 200V 8A TO-3P
Drain to Source Voltage (Vdss): 200V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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HAT2116H-EL-ERenesas Technology AmericaMOSFET N-CH 30V 30A LFPAK
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1650pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 15W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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2SJ162-ERenesas Technology AmericaMOSFET P-CH 160V 7A TO-3P
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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RJK0396DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 30A W-PAK
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 9nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1330pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 28W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2068RHAT2068RRenesas Technology AmericaMOSFET N-CH 30V 14A 8-SOP
Rds On (Max) @ Id, Vgs: 9 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1650pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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HAT2140HRenesas Technology AmericaMOSFET N-CH 100V 25A LFPAK
Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.5A, 10v  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 105nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 6500pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2209RHAT2209RRenesas Technology AmericaMOSFET N-CH 30V 7A 8-SOP
Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 3.9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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RJK0364DPA-00#J0RJK0364DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 35A WPAK
Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 17.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 10nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  Input Capacitance (Ciss) @ Vds: 1600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 35W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2171H-EL-ERenesas Technology AmericaMOSFET N-CH 40V 40A 5LFPAK
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 52nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 3750pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2173NRenesas Technology AmericaMOSFET N-CH 100V 25A LFPAK-I
Rds On (Max) @ Id, Vgs: 15.3 mOhm @ 12.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 61nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 4350pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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