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RJK0348DPA-00#J0

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RJK0348DPA-00#J0 — MOSFET N-CH 30V 50A WPAK

ManufacturerRenesas Technology America
Harmful substancesRoHS   Lead-free
Rds On (Max) @ Id, Vgs2.5 mOhm @ 25A, 10V
Drain to Source Voltage (Vdss)30V
Gate Charge (Qg) @ Vgs34nC @ 4.5V
Current - Continuous Drain (Id) @ 25° C50A
Input Capacitance (Ciss) @ Vds5100pF @ 10V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max55W
Mounting TypeSurface Mount
Package / CaseWPAK
Found under nameRJK0348DPA-00#J0CT
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
HAT2172HRenesas Technology AmericaMOSFET N-CH 40V 30A LFPAK
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 2420pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT1043M-EL-ERenesas Technology AmericaMOSFET P-CH 20V 4.4A 6TSOP
Rds On (Max) @ Id, Vgs: 65 mOhm @ 3A, 4.5V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 4.4A  ·  Input Capacitance (Ciss) @ Vds: 750pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.05W  ·  Mounting Type: Surface Mount  ·  Package / Case: 6-TSOP
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RJK0349DPA-00#J0RJK0349DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 45A WPAK
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 22.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 3850pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 50W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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RJK0352DSP-00#J0RJK0352DSP-00#J0Renesas Technology AmericaMOSFET N-CH 30V 18A 8-SOP
Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 9A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 16nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 18A  ·  Input Capacitance (Ciss) @ Vds: 2440pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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HAT2134HRenesas Technology AmericaMOSFET N-CH 20V 60A 5LFPAK
Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 70nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 4500pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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2SK3288ENTLRenesas Technology AmericaMOSFET N-CH 30V .1A MPAK
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 50mA, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Current - Continuous Drain (Id) @ 25° C: 100mA  ·  Input Capacitance (Ciss) @ Vds: 3pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 400mW  ·  Mounting Type: Surface Mount  ·  Package / Case: MPAK
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RJK0390DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 65A W-PAK
Drain to Source Voltage (Vdss): 30V  ·  Current - Continuous Drain (Id) @ 25° C: 65A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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RJK0302DPB-00#J0Renesas Technology AmericaMOSFET N-CH 30V 50A 5-LFPAK
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 25A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 28nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 50A  ·  Input Capacitance (Ciss) @ Vds: 4200pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 60W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2129HRenesas Technology AmericaMOSFET N-CH 40V 30A LFPAK
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 46nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 3200pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2197WPRenesas Technology AmericaMOSFET N-CH 30V 35A WPAK
Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 18nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 35A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2265H-EL-ERenesas Technology AmericaMOSFET N-CH 30V 55A 5LFPAK
Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 27.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 5180pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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2SJ77-ERenesas Technology AmericaMOSFET P-CH 160V 0.5A TO-220
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 500mA  ·  Input Capacitance (Ciss) @ Vds: 120pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220
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HAT2174H-EL-ERenesas Technology AmericaMOSFET N-CH 100V 20A 5LFPAK
Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 33.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 2280pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2267H-EL-ERenesas Technology AmericaMOSFET N-CH 80V 25A 5LFPAK
Rds On (Max) @ Id, Vgs: 16 mOhm @ 12.5A, 10v  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 25A  ·  Input Capacitance (Ciss) @ Vds: 2150pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2137HRenesas Technology AmericaMOSFET N-CH 40V 45A LFPAK
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 22.5A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 95nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 6200pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2279H-EL-ERenesas Technology AmericaMOSFET N-CH 80V 30A 5LFPAK
Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 3520pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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2SJ352-ERenesas Technology AmericaMOSFET P-CH 200V 8A TO-3P
Drain to Source Voltage (Vdss): 200V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 800pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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RJK0328DPB-00#J0RJK0328DPB-00#J0Renesas Technology AmericaMOSFET N-CH 30V 60A LFPAK
Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 42nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 6380pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 65W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2168HRenesas Technology AmericaMOSFET N-CH 30V 30A LFPAK
Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1730pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 15W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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2SK214Renesas Technology AmericaMOSFET N-CH 160V 500MA TO-220AB
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 500mA  ·  Input Capacitance (Ciss) @ Vds: 90pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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HAT2201RHAT2201RRenesas Technology AmericaMOSFET N-CH 100V 6A 8-SOP
Rds On (Max) @ Id, Vgs: 43 mOhm @ 3A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 6A  ·  Input Capacitance (Ciss) @ Vds: 1450pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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2SK2221-ERenesas Technology AmericaMOSFET N-CH 200V 8A TO-3P
Drain to Source Voltage (Vdss): 200V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  Input Capacitance (Ciss) @ Vds: 600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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HAT2116H-EL-ERenesas Technology AmericaMOSFET N-CH 30V 30A LFPAK
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 26nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1650pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 15W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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2SJ162-ERenesas Technology AmericaMOSFET P-CH 160V 7A TO-3P
Drain to Source Voltage (Vdss): 160V  ·  Current - Continuous Drain (Id) @ 25° C: 7A  ·  Input Capacitance (Ciss) @ Vds: 900pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 100W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-3P
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RJK0396DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 30A W-PAK
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 9nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1330pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 28W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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