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HAT2137H — MOSFET N-CH 40V 45A LFPAK

ManufacturerRenesas Technology America
Rds On (Max) @ Id, Vgs4.8 mOhm @ 22.5A, 10V
Drain to Source Voltage (Vdss)40V
Gate Charge (Qg) @ Vgs95nC @ 10V
Current - Continuous Drain (Id) @ 25° C45A
Input Capacitance (Ciss) @ Vds6200pF @ 10V
FET PolarityN-Channel
FET FeatureLogic Level Gate
Power - Max30W
Mounting TypeSurface Mount
Package / CaseLFPAK
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HAT2266N-EL-ERenesas Technology AmericaMOSFET N-CH 60V 30A LFPAKI
Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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Rds On (Max) @ Id, Vgs: 43 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 21nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  Input Capacitance (Ciss) @ Vds: 1450pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 15W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT1048RHAT1048RRenesas Technology AmericaMOSFET P-CH 30V 16A 8SOP
Rds On (Max) @ Id, Vgs: 7 mOhm @ 8A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 105nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 16A  ·  Input Capacitance (Ciss) @ Vds: 5700pF @ 10V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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RJK0368DPA-00#J0RJK0368DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 20A WPAK
Rds On (Max) @ Id, Vgs: 14.3 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.2nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 730pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2244WP-EL-ERenesas Technology AmericaMOSFET N-CH 80V 30A WPAK
Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 80V  ·  Gate Charge (Qg) @ Vgs: 60nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 3250pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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RJK0351DPA-00#J0RJK0351DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 40A WPAK
Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 2560pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 45W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2261H-EL-ERenesas Technology AmericaMOSFET N-CH 30V 45A LFPAK
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 27nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  Input Capacitance (Ciss) @ Vds: 4400pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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RJK03B7DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 30A W-PAK
Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1670pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 25nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 3850pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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RJK0395DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 30A W-PAK
Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1670pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2171HRenesas Technology AmericaMOSFET N-CH 40V 40A 5LFPAK
Rds On (Max) @ Id, Vgs: 4.8 mOhm @ 20A, 10V  ·  Drain to Source Voltage (Vdss): 40V  ·  Gate Charge (Qg) @ Vgs: 52nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  Input Capacitance (Ciss) @ Vds: 3750pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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Drain to Source Voltage (Vdss): 30V  ·  Current - Continuous Drain (Id) @ 25° C: 40A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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Rds On (Max) @ Id, Vgs: 90 mOhm @ 7.5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Current - Continuous Drain (Id) @ 25° C: 15A  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 50W  ·  Mounting Type: Through Hole  ·  Package / Case: LDPAK
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RJK0392DPA-00#J53Renesas Technology AmericaMOSFET N-CH 30V 45A W-PAK
Drain to Source Voltage (Vdss): 30V  ·  Current - Continuous Drain (Id) @ 25° C: 45A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2160N-EL-ERenesas Technology AmericaMOSFET N-CH 20V 60A LFPAKI
Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 50nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7600pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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RJK0355DPA-00#J0RJK0355DPA-00#J0Renesas Technology AmericaMOSFET N-CH 30V 30A WPAK
Rds On (Max) @ Id, Vgs: 10.7 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 6.3nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 860pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 25W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2198RHAT2198RRenesas Technology AmericaMOSFET N-CH 30V 14A 8-SOP
Rds On (Max) @ Id, Vgs: 9 mOhm @ 7A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 14A  ·  Input Capacitance (Ciss) @ Vds: 1650pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: 8-SOP
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Rds On (Max) @ Id, Vgs: 7.9 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1730pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 15W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2200WPRenesas Technology AmericaMOSFET N-CH 100V 20A WPAK
Rds On (Max) @ Id, Vgs: 28 mOhm @ 10A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 32nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 20A  ·  Input Capacitance (Ciss) @ Vds: 2300pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 20W  ·  Mounting Type: Surface Mount  ·  Package / Case: WPAK
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HAT2168N-EL-ERenesas Technology AmericaMOSFET N-CH 30V 30A LFPAKI
Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 15A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 11nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1730pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 15W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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HAT2165NRenesas Technology AmericaMOSFET N-CH 30V 55A LFPAKI
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 27.5A, 10V  ·  Drain to Source Voltage (Vdss): 30V  ·  Gate Charge (Qg) @ Vgs: 33nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 55A  ·  Input Capacitance (Ciss) @ Vds: 5180pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK-i
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HAT2160HRenesas Technology AmericaMOSFET N-CH 20V 60A LFPAK
Rds On (Max) @ Id, Vgs: 2.6 mOhm @ 30A, 10V  ·  Drain to Source Voltage (Vdss): 20V  ·  Gate Charge (Qg) @ Vgs: 54nC @ 4.5V  ·  Current - Continuous Drain (Id) @ 25° C: 60A  ·  Input Capacitance (Ciss) @ Vds: 7750pF @ 10V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 30W  ·  Mounting Type: Surface Mount  ·  Package / Case: LFPAK
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HAT2211RHAT2211RRenesas Technology AmericaMOSFET N-CH 30V 8A 8-SOP
Drain to Source Voltage (Vdss): 30V  ·  Current - Continuous Drain (Id) @ 25° C: 8A  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Mounting Type: Surface Mount  ·  Package / Case: 11-HSOP
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