Log in Register |
|
Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
FS70UM-2 | Renesas Technology America | MOSFET N-CH 100V 70A TO-220 Rds On (Max) @ Id, Vgs: 20 mOhm @ 35A, 10V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 6540pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 125W · Mounting Type: Through Hole · Package / Case: TO-220 | from 6,58 | Additional information Find at suppliers | |
2SJ162 | Renesas Technology America | MOSFET P-CH 160V 7A TO-3P Drain to Source Voltage (Vdss): 160V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 900pF @ 10V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-3P | Additional information Find at suppliers | ||
HAT2266H | Renesas Technology America | MOSFET N-CH 60V 30A 5LFPAK Rds On (Max) @ Id, Vgs: 12 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 25nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 3600pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 23W · Mounting Type: Surface Mount · Package / Case: LFPAK | Additional information Find at suppliers | ||
![]() | HAT2199R-EL-E | Renesas Technology America | MOSFET N-CH 30V 11A 8SOP Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 5.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7.5nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 11A · Input Capacitance (Ciss) @ Vds: 1060pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOP | from 0,39 | Additional information Find at suppliers |
![]() | RJK0365DPA-00#J0 | Renesas Technology America | MOSFET N-CH 30V 30A WPAK Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7.6nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1180pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: WPAK | from 0,34 from 0,38 | Additional information Find at suppliers |
![]() | HAT2088R-EL-E | Renesas Technology America | MOSFET N-CH 200V 2A 8SOP Rds On (Max) @ Id, Vgs: 440 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 2A · Input Capacitance (Ciss) @ Vds: 450pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOP | from 0,91 | Additional information Find at suppliers |
HAT2183WP | Renesas Technology America | MOSFET N-CH 150V 20A 8WPAK Rds On (Max) @ Id, Vgs: 64 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 150V · Gate Charge (Qg) @ Vgs: 27nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 1200pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: WPAK | from 1,17 | Additional information Find at suppliers | |
![]() | HAT2208R | Renesas Technology America | MOSFET N-CH 30V 9A 8-SOP Rds On (Max) @ Id, Vgs: 24 mOhm @ 4.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 4.4nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 9A · Input Capacitance (Ciss) @ Vds: 630pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 2W · Mounting Type: Surface Mount · Package / Case: 8-SOP | Additional information Find at suppliers | |
![]() | HAT2200R | Renesas Technology America | MOSFET N-CH 100V 8A 8-SOP Rds On (Max) @ Id, Vgs: 28 mOhm @ 4A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 32nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8A · Input Capacitance (Ciss) @ Vds: 2300pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 2.5W · Mounting Type: Surface Mount · Package / Case: 8-SOP | Additional information Find at suppliers | |
RJK0391DPA-00#J53 | Renesas Technology America | MOSFET N-CH 30V 50A W-PAK Drain to Source Voltage (Vdss): 30V · Current - Continuous Drain (Id) @ 25° C: 50A · FET Polarity: N-Channel · FET Feature: Standard · Mounting Type: Surface Mount · Package / Case: WPAK | from 0,44 from 0,96 | Additional information Find at suppliers | |
HAT2099H-EL-E | Renesas Technology America | MOSFET N-CH 30V 50A LFPAK Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 25A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 75nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 50A · Input Capacitance (Ciss) @ Vds: 4750pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: LFPAK | from 1,18 | Additional information Find at suppliers | |
![]() | RJK0366DPA-00#J0 | Renesas Technology America | MOSFET N-CH 30V 25A WPAK Rds On (Max) @ Id, Vgs: 11.1 mOhm @ 12.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 6.8nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 25A · Input Capacitance (Ciss) @ Vds: 1010pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: WPAK | from 0,33 from 0,38 | Additional information Find at suppliers |
HAT2166H | Renesas Technology America | MOSFET N-CH 30V 45A LFPAK Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 22.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 27nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 45A · Input Capacitance (Ciss) @ Vds: 4400pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: LFPAK | Additional information Find at suppliers | ||
HAT2199WP | Renesas Technology America | MOSFET N-CH 30V 15A WPAK Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 10W · Mounting Type: Surface Mount · Package / Case: WPAK | Additional information Find at suppliers | ||
HAT2167H | Renesas Technology America | MOSFET N-CH 30V 40A LFPAK Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 20A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 17nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 40A · Input Capacitance (Ciss) @ Vds: 2700pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: LFPAK | Additional information Find at suppliers | ||
RJK0397DPA-00#J53 | Renesas Technology America | MOSFET N-CH 30V 30A W-PAK Rds On (Max) @ Id, Vgs: 10.1 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1110pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: WPAK | from 0,24 from 0,54 | Additional information Find at suppliers | |
![]() | RJK0346DPA-00#J0 | Renesas Technology America | MOSFET N-CH 30V 65A WPAK Rds On (Max) @ Id, Vgs: 2 mOhm @ 32.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 49nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 65A · Input Capacitance (Ciss) @ Vds: 7650pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 65W · Mounting Type: Surface Mount · Package / Case: WPAK | from 0,76 from 0,82 | Additional information Find at suppliers |
HAT2172N | Renesas Technology America | MOSFET N-CH 40V 30A LFPAK-I Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 40V · Gate Charge (Qg) @ Vgs: 32nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 2420pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: LFPAK-i | Additional information Find at suppliers | ||
HAT2164H-EL-E | Renesas Technology America | MOSFET N-CH 30V 60A 5LFPAK Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 7600pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: LFPAK | from 0,98 | Additional information Find at suppliers | |
HAT2164H | Renesas Technology America | MOSFET N-CH 30V 60A LFPAK Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 30A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 50nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 60A · Input Capacitance (Ciss) @ Vds: 7600pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 30W · Mounting Type: Surface Mount · Package / Case: LFPAK | Additional information Find at suppliers | ||
2SK1058-E | Renesas Technology America | MOSFET N-CH 160V 7A TO-3P Drain to Source Voltage (Vdss): 160V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 600pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 100W · Mounting Type: Through Hole · Package / Case: TO-3P | from 9,45 | Additional information Find at suppliers | |
RJK03B9DPA-00#J53 | Renesas Technology America | MOSFET N-CH 30V 30A W-PAK Rds On (Max) @ Id, Vgs: 10.6 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 7.4nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 30A · Input Capacitance (Ciss) @ Vds: 1110pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 25W · Mounting Type: Surface Mount · Package / Case: WPAK | from 0,24 from 0,54 | Additional information Find at suppliers | |
FS70SM-06#B00 | Renesas Technology America | MOSFET N-CH 60V 70A TO-3P Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 35A, 10V · Drain to Source Voltage (Vdss): 60V · Current - Continuous Drain (Id) @ 25° C: 70A · Input Capacitance (Ciss) @ Vds: 6540pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 150W · Mounting Type: Through Hole · Package / Case: TO-3P | from 10,63 | Additional information Find at suppliers | |
HAT2174H | Renesas Technology America | MOSFET N-CH 100V 20A 5LFPAK Rds On (Max) @ Id, Vgs: 27 mOhm @ 10A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 33.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 20A · Input Capacitance (Ciss) @ Vds: 2280pF @ 10V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 20W · Mounting Type: Surface Mount · Package / Case: LFPAK | from 0,96 | Additional information Find at suppliers | |
![]() | RJK0332DPB-00#J0 | Renesas Technology America | MOSFET N-CH 30V 35A LFPAK Rds On (Max) @ Id, Vgs: 4.7 mOhm @ 17.5A, 10V · Drain to Source Voltage (Vdss): 30V · Gate Charge (Qg) @ Vgs: 14nC @ 4.5V · Current - Continuous Drain (Id) @ 25° C: 35A · Input Capacitance (Ciss) @ Vds: 2180pF @ 10V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 45W · Mounting Type: Surface Mount · Package / Case: LFPAK | from 0,68 from 1,35 | Additional information Find at suppliers |
© 2006 — 2024 ChipFind Ltd. Contact phone, e-mail, ICQ |
Catalog with parameters for 1,401,534 components | Register • Advertising |