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BSS84P-E6327

BSS84P-E6327 — MOSFET P-CH 60V 170MA SOT-23

ManufacturerInfineon Technologies
Harmful substancesRoHS   Lead-free
SeriesSIPMOS®
Rds On (Max) @ Id, Vgs8 Ohm @ 170mA, 10V
Drain to Source Voltage (Vdss)60V
Gate Charge (Qg) @ Vgs1.5nC @ 10V
Current - Continuous Drain (Id) @ 25° C170mA
Input Capacitance (Ciss) @ Vds19pF @ 25V
FET PolarityP-Channel
FET FeatureLogic Level Gate
Power - Max360mW
Mounting TypeSurface Mount
Package / CaseSOT-23
Found under nameBSS84P, BSS84PE6327XT, BSS84PINTR, BSS84PXTINTR, BSS84PXTINTR-ND, SP000012321
Analogous by characteristics
PhotoNameManufacturerTechnical parametersPrices (rub.)Buy
BSP295E6327TBSP295E6327TInfineon TechnologiesMOSFET N-CH 60V 1.8A SOT223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.8A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 17nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.8A  ·  Input Capacitance (Ciss) @ Vds: 368pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BSS84PWBSS84PWInfineon TechnologiesMOSFET P-CH 60V 150MA SOT-323
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 1.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 150mA  ·  Input Capacitance (Ciss) @ Vds: 19.1pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 300mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-323
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BSP315PE6327TBSP315PE6327TInfineon TechnologiesMOSFET P-CH 60V 1.17A SOT-223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 7.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.17A  ·  Input Capacitance (Ciss) @ Vds: 160pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BSS127 L6327Infineon TechnologiesMOSFET N-CH 600V 21MA SOT-23
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 2.1nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 21mA  ·  Input Capacitance (Ciss) @ Vds: 28pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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BSP315P-E6327BSP315P-E6327Infineon TechnologiesMOSFET P-CH 60V 1.17A SOT-223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 7.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.17A  ·  Input Capacitance (Ciss) @ Vds: 160pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BSP316P L6327BSP316P L6327Infineon TechnologiesMOSFET P-CH 100V 680MA SOT-223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 680mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 6.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 680mA  ·  Input Capacitance (Ciss) @ Vds: 146pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BUZ32 E3045ABUZ32 E3045AInfineon TechnologiesMOSFET N-CH 200V 9.5A D2PAK
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 400 mOhm @ 6A, 10V  ·  Drain to Source Voltage (Vdss): 200V  ·  Current - Continuous Drain (Id) @ 25° C: 9.5A  ·  Input Capacitance (Ciss) @ Vds: 530pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 75W  ·  Mounting Type: Surface Mount  ·  Package / Case: D²Pak, TO-263 (2 leads + tab)
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BSS138N E6433Infineon TechnologiesMOSFET N-CH 60V 230MA SOT-23
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 1.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 230mA  ·  Input Capacitance (Ciss) @ Vds: 41pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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BSP324 L6327BSP324 L6327Infineon TechnologiesMOSFET N-CH 400V 170MA SOT-223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 25 Ohm @ 170mA, 10V  ·  Drain to Source Voltage (Vdss): 400V  ·  Gate Charge (Qg) @ Vgs: 5.9nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 170mA  ·  Input Capacitance (Ciss) @ Vds: 154pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BSS138N E6908Infineon TechnologiesMOSFET N-CH 60V 230MA SOT-23
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 1.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 230mA  ·  Input Capacitance (Ciss) @ Vds: 41pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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BSS119 E7796Infineon TechnologiesMOSFET N-CH 100V 170MA SOT-23
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 2.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 170mA  ·  Input Capacitance (Ciss) @ Vds: 78pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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BSS159N L6327Infineon TechnologiesMOSFET N-CH 60V 230MA SOT-23
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 2.9nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 230mA  ·  Input Capacitance (Ciss) @ Vds: 44pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Depletion Mode  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 240nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 70A  ·  Input Capacitance (Ciss) @ Vds: 4540pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 250W  ·  Mounting Type: Through Hole  ·  Package / Case: I²Pak, TO-262 (3 straight leads + tab)
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BSO613SPV GInfineon TechnologiesMOSFET P-CH 60V 3.44A DSO-8
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 130 mOhm @ 3.44A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 30nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 3.44A  ·  Input Capacitance (Ciss) @ Vds: 875pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 2.5W  ·  Mounting Type: Surface Mount  ·  Package / Case: DSO-8
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BSS126 E6327Infineon TechnologiesMOSFET N-CH 600V 21MA SOT-23
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V  ·  Drain to Source Voltage (Vdss): 600V  ·  Gate Charge (Qg) @ Vgs: 2.1nC @ 5V  ·  Current - Continuous Drain (Id) @ 25° C: 21mA  ·  Input Capacitance (Ciss) @ Vds: 28pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Depletion Mode  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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SPU08P06PSPU08P06PInfineon TechnologiesMOSFET P-CH 60V 8.83A TO-251
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 13nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 8.83A  ·  Input Capacitance (Ciss) @ Vds: 420pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 42W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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BSP89 E6327BSP89 E6327Infineon TechnologiesMOSFET N-CH 240V 350MA SOT-223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V  ·  Drain to Source Voltage (Vdss): 240V  ·  Gate Charge (Qg) @ Vgs: 6.4nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 350mA  ·  Input Capacitance (Ciss) @ Vds: 140pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BSS192E6327Infineon TechnologiesMOSFET P-CH 240V 150MA SOT-89
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 10V  ·  Drain to Source Voltage (Vdss): 240V  ·  Current - Continuous Drain (Id) @ 25° C: 150mA  ·  Input Capacitance (Ciss) @ Vds: 130pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-89
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SPU30P06PSPU30P06PInfineon TechnologiesMOSFET P-CH 60V 30A IPAK
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 75 mOhm @ 21.5A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 48nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 30A  ·  Input Capacitance (Ciss) @ Vds: 1535pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Standard  ·  Power - Max: 125W  ·  Mounting Type: Through Hole  ·  Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
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SN7002W E6433SN7002W E6433Infineon TechnologiesMOSFET N-CH 60V 230MA SOT-323
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 5 Ohm @ 230mA, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 1.5nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 230mA  ·  Input Capacitance (Ciss) @ Vds: 45pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 500mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-323
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BSP88 L6327BSP88 L6327Infineon TechnologiesMOSFET N-CH 240V 350MA SOT223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 350mA, 10V  ·  Drain to Source Voltage (Vdss): 240V  ·  Gate Charge (Qg) @ Vgs: 6.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 350mA  ·  Input Capacitance (Ciss) @ Vds: 95pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BSP315P L6327BSP315P L6327Infineon TechnologiesMOSFET P-CH 60V 1.17A SOT-223
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V  ·  Drain to Source Voltage (Vdss): 60V  ·  Gate Charge (Qg) @ Vgs: 7.8nC @ 10V  ·  Current - Continuous Drain (Id) @ 25° C: 1.17A  ·  Input Capacitance (Ciss) @ Vds: 160pF @ 25V  ·  FET Polarity: P-Channel  ·  FET Feature: Logic Level Gate  ·  Power - Max: 1.8W  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
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BSS169 E6906Infineon TechnologiesMOSFET N-CH 100V 170MA SOT-23
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 2.8nC @ 7V  ·  Current - Continuous Drain (Id) @ 25° C: 170mA  ·  Input Capacitance (Ciss) @ Vds: 68pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Depletion Mode  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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BSS169 L6906Infineon TechnologiesMOSFET N-CH 100V 170MA SOT-23
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Gate Charge (Qg) @ Vgs: 2.8nC @ 7V  ·  Current - Continuous Drain (Id) @ 25° C: 170mA  ·  Input Capacitance (Ciss) @ Vds: 68pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Depletion Mode  ·  Power - Max: 360mW  ·  Mounting Type: Surface Mount  ·  Package / Case: SOT-23
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BUZ21Infineon TechnologiesMOSFET N-CH 100V 21A TO-220AB
Series: SIPMOS®  ·  Rds On (Max) @ Id, Vgs: 85 mOhm @ 13A, 10V  ·  Drain to Source Voltage (Vdss): 100V  ·  Current - Continuous Drain (Id) @ 25° C: 21A  ·  Input Capacitance (Ciss) @ Vds: 1300pF @ 25V  ·  FET Polarity: N-Channel  ·  FET Feature: Standard  ·  Power - Max: 75W  ·  Mounting Type: Through Hole  ·  Package / Case: TO-220AB
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