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Photo | Name | Manufacturer | Technical parameters | Prices (rub.) | Buy |
SPD08P06P | Infineon Technologies | MOSFET P-CH 60V 8.83A DPAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 13nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.83A · Input Capacitance (Ciss) @ Vds: 420pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 42W · Mounting Type: Surface Mount · Package / Case: DPak, TO-252 (2 leads+tab), SC-63 | Additional information Find at suppliers | ||
![]() | BSP149 L6906 | Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 14nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 660mA · Input Capacitance (Ciss) @ Vds: 430pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
IPB47N10SL-26 | Infineon Technologies | MOSFET N-CH 100V 47A TO263-3 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 26 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 135nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 175W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | from 0,78 | Additional information Find at suppliers | |
![]() | SPP80P06P | Infineon Technologies | MOSFET P-CH 60V 80A TO-220AB Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 23 mOhm @ 64A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 173nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 80A · Input Capacitance (Ciss) @ Vds: 5033pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 340W · Mounting Type: Through Hole · Package / Case: TO-220AB | from 2,53 from 3,61 | Additional information Find at suppliers |
![]() | BSS131E6327 | Infineon Technologies | MOSFET N-CH 240V .11A SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 14 Ohm @ 100mA, 10V · Drain to Source Voltage (Vdss): 240V · Gate Charge (Qg) @ Vgs: 3.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 110mA · Input Capacitance (Ciss) @ Vds: 77pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,16 from 0,47 | Additional information Find at suppliers |
![]() | BSP372 L6327 | Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 310 mOhm @ 1.7A, 5V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 520pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,42 from 0,94 | Additional information Find at suppliers |
BSP322P L6327 | Infineon Technologies | MOSFET P-CH 100V 1A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 800 mOhm @ 1A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 16.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1A · Input Capacitance (Ciss) @ Vds: 372pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,28 | Additional information Find at suppliers | |
![]() | SPP15P10P | Infineon Technologies | MOSFET P-CH 100V 15A TO-220AB Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 240 mOhm @ 10.6A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 50nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 15A · Input Capacitance (Ciss) @ Vds: 1180pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 128W · Mounting Type: Through Hole · Package / Case: TO-220AB | from 1,33 from 1,77 | Additional information Find at suppliers |
IPP47N10S-33 | Infineon Technologies | MOSFET N-CH 100V 47A TO220-3 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 33 mOhm @ 33A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 105nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 47A · Input Capacitance (Ciss) @ Vds: 2500pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 175W · Mounting Type: Through Hole · Package / Case: TO-220-3 | from 0,85 | Additional information Find at suppliers | |
![]() | BSS123 L6327 | Infineon Technologies | MOSFET N-CH 100V 170MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 2.67nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 170mA · Input Capacitance (Ciss) @ Vds: 69pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,05 from 0,07 | Additional information Find at suppliers |
![]() | BSP372 E6327 | Infineon Technologies | MOSFET N-CH 100V 1.7A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 310 mOhm @ 1.7A, 5V · Drain to Source Voltage (Vdss): 100V · Current - Continuous Drain (Id) @ 25° C: 1.7A · Input Capacitance (Ciss) @ Vds: 520pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
![]() | SPP08P06P | Infineon Technologies | MOSFET P-CH 60V 8.8A TO-220AB Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 6.2A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 15nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 8.8A · Input Capacitance (Ciss) @ Vds: 420pF @ 25V · FET Polarity: P-Channel · FET Feature: Standard · Power - Max: 42W · Mounting Type: Through Hole · Package / Case: TO-220AB | from 0,65 from 0,97 | Additional information Find at suppliers |
![]() | BSS7728N | Infineon Technologies | MOSFET N-CH 60V 200MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 200mA · Input Capacitance (Ciss) @ Vds: 56pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,05 from 0,29 | Additional information Find at suppliers |
![]() | BSP149 E6327 | Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 14nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 660mA · Input Capacitance (Ciss) @ Vds: 430pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
BSS138N E8004 | Infineon Technologies | MOSFET N-CH 60V 230MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 230mA · Input Capacitance (Ciss) @ Vds: 41pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | Additional information Find at suppliers | ||
![]() | BSP149 L6327 | Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 14nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 660mA · Input Capacitance (Ciss) @ Vds: 430pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,66 from 1,18 | Additional information Find at suppliers |
![]() | BUZ73L | Infineon Technologies | MOSFET N-CH 200V 7A TO-220AB Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 400 mOhm @ 3.5A, 5V · Drain to Source Voltage (Vdss): 200V · Current - Continuous Drain (Id) @ 25° C: 7A · Input Capacitance (Ciss) @ Vds: 840pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 40W · Mounting Type: Through Hole · Package / Case: TO-220AB | from 0,47 from 1,18 | Additional information Find at suppliers |
![]() | BSP297 E6327 | Infineon Technologies | MOSFET N-CH 200V 660MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 660mA, 10v · Drain to Source Voltage (Vdss): 200V · Gate Charge (Qg) @ Vgs: 16.1nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 660mA · Input Capacitance (Ciss) @ Vds: 357pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | Additional information Find at suppliers | |
SPB21N10T | Infineon Technologies | MOSFET N-CH 100V 21A D2PAK Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 38.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 865pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Surface Mount · Package / Case: D²Pak, TO-263 (2 leads + tab) | Additional information Find at suppliers | ||
BSS159N L6906 | Infineon Technologies | MOSFET N-CH 60V 230MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 160mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 2.9nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 230mA · Input Capacitance (Ciss) @ Vds: 44pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 360mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,23 | Additional information Find at suppliers | |
![]() | SPP21N10 | Infineon Technologies | MOSFET N-CH 100V 21A TO-220AB Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 80 mOhm @ 15A, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 38.4nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 21A · Input Capacitance (Ciss) @ Vds: 865pF @ 25V · FET Polarity: N-Channel · FET Feature: Standard · Power - Max: 90W · Mounting Type: Through Hole · Package / Case: TO-220AB | from 1,38 from 1,84 | Additional information Find at suppliers |
BSS126 L6906 | Infineon Technologies | MOSFET N-CH 600V 21MA SOT-23 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 500 Ohm @ 16mA, 10V · Drain to Source Voltage (Vdss): 600V · Gate Charge (Qg) @ Vgs: 2.1nC @ 5V · Current - Continuous Drain (Id) @ 25° C: 21mA · Input Capacitance (Ciss) @ Vds: 28pF @ 25V · FET Polarity: N-Channel · FET Feature: Depletion Mode · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-23 | from 0,23 | Additional information Find at suppliers | |
BSP321P L6327 | Infineon Technologies | MOSFET P-CH 100V 980MA SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 900 mOhm @ 980mA, 10V · Drain to Source Voltage (Vdss): 100V · Gate Charge (Qg) @ Vgs: 12nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 980mA · Input Capacitance (Ciss) @ Vds: 319pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,28 | Additional information Find at suppliers | |
![]() | BSS138W E6327 | Infineon Technologies | MOSFET N-CH 60V 280MA SOT-323 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 1.5nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 280mA · Input Capacitance (Ciss) @ Vds: 43pF @ 25V · FET Polarity: N-Channel · FET Feature: Logic Level Gate · Power - Max: 500mW · Mounting Type: Surface Mount · Package / Case: SOT-323 | Additional information Find at suppliers | |
![]() | BSP170P L6327 | Infineon Technologies | MOSFET P-CH 60V 1.9A SOT-223 Series: SIPMOS® · Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V · Drain to Source Voltage (Vdss): 60V · Gate Charge (Qg) @ Vgs: 14nC @ 10V · Current - Continuous Drain (Id) @ 25° C: 1.9A · Input Capacitance (Ciss) @ Vds: 410pF @ 25V · FET Polarity: P-Channel · FET Feature: Logic Level Gate · Power - Max: 1.8W · Mounting Type: Surface Mount · Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA | from 0,37 from 0,83 | Additional information Find at suppliers |
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