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SPP80N04S2L-03 — MOSFET N-CH 40V 80A TO-220

Manufacturer: Infineon Technologies  •  Series: OptiMOS™  •  Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V  •  Drain to Source Voltage (Vdss): 40V  •  Gate Charge (Qg) @ Vgs: 213nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 80A  •  Input Capacitance (Ciss) @ Vds: 7930pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 300W  •  Mounting Type: Through Hole  •  Package / Case: TO-220  •  Other PartNo: SP000012472, SPP80N04S2L03
Datasheet
Cross-referenceSTP200NF04, STP120NF04   Technical Specification »

   


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Suppliers of «SPP80N04S2L03»

SupplierPart NoManufacturerPriceStock
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!SPP80N04S2L-03
Package: : TO220; , D/c: : 22+
Infineon 45000
Digi-ic_SMART PIONEER ElectronicFresh data!SPP80N04S2L-03
MOSFET N-CH 40V 80A TO220-3 Подробнее
Infineon Technologies 137499


Company Information

CompanyOfficePhoneE-mailFeedback 
Digi-ic_SMART PIONEER ElectronicHong Kong(86) 135123388010  0 Hide
ShenZhen(86) 0755-82535750
HongKong Teyou Huicheng Electronic Technology LimitedShenZhen(86) 18938853596, Fax: (0755) 825698150  0 Hide
AN-CHIP0  0 Hide
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