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SPI35N10 — MOSFET N-CH 100V 35A I2PAK

Manufacturer: Infineon Technologies  •  RoHS/pb-free: RoHS   Pb-free  •  Series: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 65nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 35A  •  Input Capacitance (Ciss) @ Vds: 1570pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 150W  •  Mounting Type: Through Hole  •  Package / Case: I²Pak, TO-262 (3 straight leads + tab)  •  Other PartNo: SP000013852, SPI35N10X
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Suppliers of «SPI35N10»

SupplierPart NoManufacturerPriceStock
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!SPI35N10
Package: : TO-262; , D/c: : 22+
Infineon 55000
Digi-ic_SMART PIONEER ElectronicFresh data!SPI35N10
MOSFET N-CH 100V 35A TO262-3 Подробнее
Infineon Technologies 160468


Company Information

CompanyOfficePhoneE-mailFeedback 
Digi-ic_SMART PIONEER ElectronicHong Kong(86) 135123388010  0 Hide
ShenZhen(86) 0755-82535750
HongKong Teyou Huicheng Electronic Technology LimitedShenZhen(86) 18938853596, Fax: (0755) 825698150  0 Hide
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