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MMUN2212LT1 — TRANS BRT NPN 100MA 50V SOT23

Manufacturer: ON Semiconductor  •  Voltage - Collector Emitter Breakdown (Max): 50V  •  Resistor - Base (R1) (Ohms): 22K  •  Resistor - Emitter Base (R2) (Ohms): 22K  •  DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V  •  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  •  Current - Collector (Ic) (Max): 100mA  •  Current - Collector Cutoff (Max): 500nA  •  Power - Max: 400mW  •  Transistor Type: NPN - Pre-Biased  •  Mounting Type: Surface Mount  •  Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3  •  Other PartNo: MMUN2212LT1OSCT
Datasheet
Cross-referenceDDTC124ECA, BCR141   Technical Specification »

   


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    SupplierPart NoManufacturerPriceStock
    OOO "Radio-Komplekt"MMUN2212LT1 ONS
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    EMEA,REEL; от шт.    		ONS Срок 6-8 weeks, 171000
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    Подробную информацию уточняйте у наших менеджеров.    		SANKEN Stock
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    AN-CHIPFresh data!MMUN2212LT1G
    микросхема интегральная электронная TRANS BRT NPN 100MA 50V SOT23 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21    		ON Semiconductor 33187
    MMUN2212LT1
    микросхема интегральная электронная TRANS BRT NPN 100MA 50V SOT23 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21    		ON Semiconductor 34680
    ООО "Аркион"Fresh data!MMUN2212LT1G
    SOT-23 от 4-х недель; , Package: : N/A; , Min order: : 1; , D/c: : D/C: N/A    		ON Semiconductor 22685
    ASOURCING ELECTRONICSMMUN2212LT1G
    В наличии на складе TC в КНР. Доставка РФ в срок от 2 недель; , Package: : #N/A; , D/c: : 2021    		ON 4000
    AxionТРАНЗИСТОР MMUN2212LT1 132
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    ALBERT.AFresh data!MMUN2212LT1 ONS
    D/c: : 04:670    		130 RUB670
    VolgaIntegral LLCFresh data!NSVMMUN2212LT1GOn Semiconductor 171000
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    Altex RussiaMMUN2212LT1G 3, Москва


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