Manufacturer: Vishay/Siliconix  •  Series: HEXFET®  •  Rds On (Max) @ Id, Vgs: 28 mOhm @ 29A, 10V  •  Drain to Source Voltage (Vdss): 50V  •  Gate Charge (Qg) @ Vgs: 60nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 35A  •  Input Capacitance (Ciss) @ Vds: 3000pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 125W  •  Mounting Type: Through Hole  •  Package / Case: TO-220-3 (Straight Leads)  •  Other PartNo: *IRFZ40