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IRFBC20L — MOSFET N-CH 600V 2.2A TO-262

Manufacturer: Vishay/Siliconix  •  Rds On (Max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V  •  Drain to Source Voltage (Vdss): 600V  •  Gate Charge (Qg) @ Vgs: 18nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 2.2A  •  Input Capacitance (Ciss) @ Vds: 350pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 3.1W  •  Mounting Type: Through Hole  •  Package / Case: I²Pak, TO-262 (3 straight leads + tab)  •  Other PartNo: *IRFBC20L
Datasheet
  • IRFBC20L - Power MOSFET (Vdss=600V, Rds (on) =4.4ohm, Id=2.2A) • Discrete
  • doc on site vishay.com
Cross-reference2SK2865, SPI07N60C3, SSI2N60A   Technical Specification »

   


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