Manufacturer: International Rectifier  •  Series: HEXFET®  •  Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 6nC @ 4.5V  •  Current - Continuous Drain (Id) @ 25° C: 2.7A  •  Input Capacitance (Ciss) @ Vds: 400pF @ 15V  •  FET Polarity: 2 N-Channel (Dual)  •  FET Feature: Logic Level Gate  •  Power - Max: 960mW  •  Mounting Type: Surface Mount  •  Package / Case: 6-TSOP