Datasheet
GT10J312SM
- Vces (volts) = 600 ; Ic (amps) = 10 ; Vce (sat) Max = 2.7 ; Ton (usec) = 0.4 ; Toff (usec) = 0.5 ; Additional Information = •
IGBTs (Insulated Gate Bipolar Transistors)
Cross-reference
IRG4BC20KD-S
Technical Specification »
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HongKong Teyou Huicheng Electronic Technology Limited, ShenZhen
(86) 18938853596, Fax: (0755) 82569815, info3@tyhchk.com
GT10J312SM
(Package: : TO263; , D/c: : 22+)
TOSHIBA
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45000