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Datasheet «GT10J312SM»
Part Number
GT10J312SM
Manufacturer
Toshiba Semiconductor (
www.semicon.toshiba.co.jp
)
Note
Vces (volts) = 600 ; Ic (amps) = 10 ; Vce (sat) Max = 2.7 ; Ton (usec) = 0.4 ; Toff (usec) = 0.5 ; Additional Information =
Function
IGBTs (Insulated Gate Bipolar Transistors)
Document Size
Pages: 6, 295.12Kb
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