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UNR111F — TRANS PNP W/RES 30 HFE M TYPE

Manufacturer: Panasonic - SSG  •  Voltage - Collector Emitter Breakdown (Max): 50V  •  Resistor - Base (R1) (Ohms): 4.7K  •  Resistor - Emitter Base (R2) (Ohms): 10K  •  DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V  •  Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA  •  Current - Collector (Ic) (Max): 100mA  •  Current - Collector Cutoff (Max): 500nA  •  Frequency - Transition: 80MHz  •  Power - Max: 400mW  •  Transistor Type: PNP - Pre-Biased  •  Mounting Type: Surface Mount  •  Package / Case: M-Type
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Suppliers of «UNR111F»

SupplierPart NoManufacturerPriceStock
Element-chelто125-10-10-2 /10А, 1000в/ оптотиристоры
то125-10-10-2 91г /10А, 1000в/
mult: 270 RUB8
AspectUNR111F from 7 days
ООО "Интегральные схемы"UNR111F from 7 days


Company Information

CompanyOfficePhoneE-mailFeedback 
Element-chelChelyabinsk+7 (351) 225-36-670  0 Hide
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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