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SI4322DY-T1-E3
— MOSFET N-CH 30V 18A 8-SOIC
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: Vishay/Siliconix
•
RoHS/pb-free:
RoHS
Pb-free
•
Series: TrenchFET®
•
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
•
Drain to Source Voltage (Vdss): 30V
•
Gate Charge (Qg) @ Vgs: 38nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 18A
•
Input Capacitance (Ciss) @ Vds: 1640pF @ 15V
•
FET Polarity: N-Channel
•
FET Feature: Standard
•
Power - Max: 5.4W
•
Mounting Type: Surface Mount
•
Package / Case: 8-SOIC (3.9mm Width)
•
Other PartNo: SI4322DY-T1-E3TR
Datasheet
doc
on site vishay.com
Manufacturers
VISHAY/
Vishay Siliconix
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SI4322DY-T1-E3
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SI4322DY-T1-E3
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Si4322DY-T1-E3
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