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SI4322DY-T1-E3 — MOSFET N-CH 30V 18A 8-SOIC

Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Series: TrenchFET®  •  Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V  •  Drain to Source Voltage (Vdss): 30V  •  Gate Charge (Qg) @ Vgs: 38nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 18A  •  Input Capacitance (Ciss) @ Vds: 1640pF @ 15V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 5.4W  •  Mounting Type: Surface Mount  •  Package / Case: 8-SOIC (3.9mm Width)  •  Other PartNo: SI4322DY-T1-E3TR
Datasheet
  • doc on site vishay.com

   


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Suppliers of «SI4322DY-T1-E3»

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ООО "Интегральные схемы"SI4322DY-T1-E3 from 7 days
AspectSI4322DY-T1-E3 from 7 days
EK-KomponentFresh data!Si4322DY-T1-E3Vishay 1825


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Digi-ic_SMART PIONEER Electronic0  0 Hide
HongKong Teyou Huicheng Electronic Technology Limited0  0 Hide
Icseek Global Limited0  0 Hide
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
EK-KomponentMoscow+7 (495) 849514250300  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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