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SI3460BDV-T1-E3 — MOSFET N-CH 20V 8A 6-TSOP

Manufacturer: Vishay/Siliconix  •  RoHS/pb-free: RoHS   Pb-free  •  Series: TrenchFET®  •  Rds On (Max) @ Id, Vgs: 27 mOhm @ 5.1A, 4.5V  •  Drain to Source Voltage (Vdss): 20V  •  Gate Charge (Qg) @ Vgs: 24nC @ 8V  •  Current - Continuous Drain (Id) @ 25° C: 8A  •  Input Capacitance (Ciss) @ Vds: 860pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 3.5W  •  Mounting Type: Surface Mount  •  Package / Case: 6-TSOP  •  Other PartNo: SI3460BDV-T1-E3CT
Datasheet
  • doc on site vishay.com

   


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EK-KomponentFresh data!SI3460BDV-T1-E3Vishay 2055
ООО "Интегральные схемы"SI3460BDV-T1-E3 from 7 days
AspectSI3460BDV-T1-E3 from 7 days


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