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MUN5233T1 — TRANS BRT NPN 100MA 50V SOT-323

Manufacturer: ON Semiconductor  •  Voltage - Collector Emitter Breakdown (Max): 50V  •  Resistor - Base (R1) (Ohms): 4.7K  •  Resistor - Emitter Base (R2) (Ohms): 47K  •  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V  •  Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA  •  Current - Collector (Ic) (Max): 100mA  •  Current - Collector Cutoff (Max): 500nA  •  Power - Max: 310mW  •  Transistor Type: NPN - Pre-Biased  •  Mounting Type: Surface Mount  •  Package / Case: SC-70-3, SOT-323-3
Datasheet
  • MUN5233T1 - NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
  • MUN5233T1 - NPN SILICON BIAS RESISTOR TRANSISTORS
  • MUN5211T1-D.PDF on site onsemi.com
Cross-referenceDDTC143ZUA, BCR116W   Technical Specification »

   


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    микросхема интегральная электронная TRANS BRT NPN 100MA 50V SOT-323 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21    		ON Semiconductor 33259
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    микросхема интегральная электронная TRANS BRT NPN 100MA 50V SOT-323 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21    		ON Semiconductor 27188
    VolgaIntegral LLCFresh data!SMUN5233T1GOn Semiconductor 51000
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