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IXFN32N120 — MOSFET N-CH 1200V 32A SOT-227B

Manufacturer: IXYS  •  RoHS/pb-free: RoHS   Pb-free  •  Series: HiPerFET™  •  Rds On (Max) @ Id, Vgs: 350 mOhm @ 500mA, 10V  •  Drain to Source Voltage (Vdss): 1200V (1.2kV)  •  Gate Charge (Qg) @ Vgs: 400nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 32A  •  Input Capacitance (Ciss) @ Vds: 15900pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 780W  •  Mounting Type: Chassis Mount  •  Package / Case: SOT-227B miniBLOC
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Suppliers of «IXFN32N120»

SupplierPart NoManufacturerPriceStock
ООО "Интегральные схемы"IXFN32N120 from 7 days
IXFN32N120P from 7 days
Delta ElectronicsIXFN32N120P
MOSFET транзистор; 1200В; 32А; 0,31Ом; корпус SOT-227
1221.25 RUB6-8 weeks
IXFN32N120
M O S F E T B @ 0 = 7 8 A B > @ ; 1 2 0 0 ;
6-8 weeks
AspectIXFN32N120 from 7 days
IXFN32N120P from 7 days


Company Information

CompanyOfficePhoneE-mailFeedback 
Digi-ic_SMART PIONEER Electronic0  0 Hide
Geefook (shenzhen) Electronic Co., Ltd0  0 Hide
Icseek Global Limited0  0 Hide
King-YiKu Optoelectronics Co., Ltd.0  0 Hide
Yee Hing Technology Co., Limit0  0 Hide
Delta ElectronicsMoscow+7 (495) 660-36-02, Fax: (495) 660-36-029  11 Hide
Voronez+7 (473) 239-22-22
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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