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IPB080N06N G — MOSFET N-CH 60V 80A TO-263

Manufacturer: Infineon Technologies  •  RoHS/pb-free: RoHS   Pb-free  •  Series: OptiMOS™  •  Rds On (Max) @ Id, Vgs: 7.7 mOhm @ 80A, 10V  •  Drain to Source Voltage (Vdss): 60V  •  Gate Charge (Qg) @ Vgs: 93nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 80A  •  Input Capacitance (Ciss) @ Vds: 3500pF @ 30V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 214W  •  Mounting Type: Surface Mount  •  Package / Case: D²Pak, TO-263 (2 leads + tab)  •  Other PartNo: IPB080N06NGINCT
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Suppliers of «IPB080N06N G»

SupplierPart NoManufacturerPriceStock
AN-CHIPFresh data!IPB080N06N G
микросхема интегральная электронная MOSFET N-CH 60V 80A TO-263 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21
Infineon Technologies (IR) 27659
ООО "Интегральные схемы"IPB080N06N G from 7 days
AspectIPB080N06N G from 7 days


Company Information

CompanyOfficePhoneE-mailFeedback 
Digi-ic_SMART PIONEER Electronic0  0 Hide
HongKong Teyou Huicheng Electronic Technology Limited0  0 Hide
IC STOCK TECHNOLOGY LIMITED0  0 Hide
Icseek Global Limited0  0 Hide
King-YiKu Optoelectronics Co., Ltd.0  0 Hide
AN-CHIPSt. Petersburg+7 (812) 922-25-390  0 Hide
AspectSt. Petersburg+7 (812) 309-89-320  0 Hide
ООО "Интегральные схемы"St. Petersburg+7 (812) 448-53-820  0 Hide
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