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HAT2172N — MOSFET N-CH 40V 30A LFPAK-I

Manufacturer: Renesas Technology America  •  Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 15A, 10V  •  Drain to Source Voltage (Vdss): 40V  •  Gate Charge (Qg) @ Vgs: 32nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 30A  •  Input Capacitance (Ciss) @ Vds: 2420pF @ 10V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 20W  •  Mounting Type: Surface Mount  •  Package / Case: LFPAK-i
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    Suppliers of «HAT2172N»

    SupplierPart NoManufacturerPriceStock
    AN-CHIPHAT2172N
    микросхема интегральная электронная MOSFET N-CH 40V 30A LFPAK-I 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21    		Renesas Electronics America 35935
    HAT2172N-EL-E
    микросхема интегральная электронная MOSFET N-CH 40V 30A LFPAK-I 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21    		Renesas Electronics America 38108
    ООО "Интегральные схемы"HAT2172N from 7 days
    HAT2172N-EL-E from 7 days
    AspectHAT2172N from 7 days
    HAT2172N-EL-E from 7 days


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