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FQP19N10L — MOSFET N-CH 100V 19A TO-220

Manufacturer: Fairchild Semiconductor  •  RoHS/pb-free: RoHS   Pb-free  •  Series: QFET™  •  Rds On (Max) @ Id, Vgs: 100 mOhm @ 9.5A, 10V  •  Drain to Source Voltage (Vdss): 100V  •  Gate Charge (Qg) @ Vgs: 18nC @ 5V  •  Current - Continuous Drain (Id) @ 25° C: 19A  •  Input Capacitance (Ciss) @ Vds: 870pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 75W  •  Mounting Type: Through Hole  •  Package / Case: TO-220-3 (Straight Leads)
Datasheet
Cross-referenceSTP22NE10L   Technical Specification »

   


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