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BSP322P L6327
— MOSFET P-CH 100V 1A SOT-223
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: Infineon Technologies
•
RoHS/pb-free:
RoHS
Pb-free
•
Series: SIPMOS®
•
Rds On (Max) @ Id, Vgs: 800 mOhm @ 1A, 10V
•
Drain to Source Voltage (Vdss): 100V
•
Gate Charge (Qg) @ Vgs: 16.5nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 1A
•
Input Capacitance (Ciss) @ Vds: 372pF @ 25V
•
FET Polarity: P-Channel
•
FET Feature: Logic Level Gate
•
Power - Max: 1.8W
•
Mounting Type: Surface Mount
•
Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA
•
Other PartNo: SP000212229
Datasheet
BSP322_Rev1.03.pdf
on site infineon.com
Part Numbers
BSP322PL6327
BSP322PL6327HTSA1
Manufacturers
INFINEON
Infineon Technologies
Infineon Technologies AG
Infineon Technologies (IR)
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Digi-ic_SMART PIONEER Electronic
BSP322PL6327
P-CHANNEL MOSFET
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Infineon Technologies
134979
Icseek Global Limited
BSP322PL6327
Оригинальный и наличный и новый
INFINEON
6413
Icseek Global Limited
BSP322P L6327
Оригинальный и наличный и новый
INFINEON
6413
Digi-ic_SMART PIONEER Electronic
BSP322PL6327HTSA1
MOSFET P-CH 100V 1A SOT223-4
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Infineon Technologies
134713
Icseek Global Limited
BSP322PL6327HTSA1
Оригинальный и наличный и новый
INFINEON
6413
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