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BSP315PE6327T — MOSFET P-CH 60V 1.17A SOT-223

Manufacturer: Infineon Technologies  •  Series: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V  •  Drain to Source Voltage (Vdss): 60V  •  Gate Charge (Qg) @ Vgs: 7.8nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 1.17A  •  Input Capacitance (Ciss) @ Vds: 160pF @ 25V  •  FET Polarity: P-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.8W  •  Mounting Type: Surface Mount  •  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA  •  Other PartNo: BSP315PXTINCT
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Suppliers of «BSP315PE6327T»

SupplierPart NoManufacturerPriceStock
Digi-ic_SMART PIONEER ElectronicFresh data!BSP315PE6327T
MOSFET P-CH 60V 1.17A SOT223-4 Подробнее
Infineon Technologies 160015
Icseek Global LimitedBSP315PE6327T
Оригинальный и наличный и новый
INFINEON 6413


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Digi-ic_SMART PIONEER ElectronicHong Kong(86) 135123388010  0 Hide
ShenZhen(86) 0755-82535750
Icseek Global LimitedShenZhen(86755) 83000080(10), Fax: (86755) 830080(908)0  0 Hide
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