Manufacturer: Infineon Technologies  •  Series: SIPMOS®  •  Rds On (Max) @ Id, Vgs: 45 Ohm @ 120mA, 10V  •  Drain to Source Voltage (Vdss): 600V  •  Gate Charge (Qg) @ Vgs: 6.6nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 120mA  •  Input Capacitance (Ciss) @ Vds: 150pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Logic Level Gate  •  Power - Max: 1.8W  •  Mounting Type: Surface Mount  •  Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA  •  Other PartNo: BSP125E6327T, SP000011100