BFG196E6327 | Part Number

Features

BFG 196 E6327 — TRANSISTOR RF NPN 12V SOT-223
Discrete Semiconductor Products » RF Transistors (BJT)

Manufacturer: Infineon Technologies • Voltage - Collector Emitter Breakdown (Max): 12V • Frequency - Transition: 7.5GHz • Noise Figure (dB Typ @ f): 1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz • Gain: 14.5dB ~ 9dB • Power - Max: 800mW • Transistor Type: NPN • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 8V • Current - Collector (Ic) (Max): 150mA • Mounting Type: Surface Mount • Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261AA • Other PartNo: BFG196E6327T, BFG196E6327XT, SP000010995

BFG 196 E6327 — TRANSISTOR RF NPN 12V SOT-223
Discrete Semiconductor Products » RF Transistors (BJT)

Suppliers of «BFG196E6327»

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BFG 196 E6327 — TRANSISTOR RF NPN 12V SOT-223Discrete Semiconductor Products » RF Transistors (BJT)

Suppliers of «BFG196E6327»

Company Information

BFG 196 E6327 — TRANSISTOR RF NPN 12V SOT-223
Discrete Semiconductor Products » RF Transistors (BJT)