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2SK3906(Q)
— MOSFET N-CH 600V 20A SC-65
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: Toshiba
•
RoHS/pb-free:
RoHS
Pb-free
•
Rds On (Max) @ Id, Vgs: 330 mOhm @ 10A, 10V
•
Drain to Source Voltage (Vdss): 600V
•
Gate Charge (Qg) @ Vgs: 60nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 20A
•
Input Capacitance (Ciss) @ Vds: 4250pF @ 25V
•
FET Polarity: N-Channel
•
FET Feature: Standard
•
Power - Max: 150W
•
Mounting Type: Through Hole
•
Package / Case: 2-16C1B (TO-247 N)
Datasheet
19924.pdf
on site toshiba.com
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ООО "Интегральные схемы"
2SK3906(Q)
from 7 days
Aspect
2SK3906(Q)
from 7 days
HongKong Teyou Huicheng Electronic Technology Limited
2SK3906(Q)
Package: : TO-3PN; , D/c: : 22+
Toshiba
45000
Digi-ic_SMART PIONEER Electronic
2SK3906(Q)
MOSFET N-CH 600V 20A TO3P
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Toshiba Semiconductor and Storage
162384
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