Features

2SK3906(Q) — MOSFET N-CH 600V 20A SC-65

Manufacturer: Toshiba  •  RoHS/pb-free: RoHS   Pb-free  •  Rds On (Max) @ Id, Vgs: 330 mOhm @ 10A, 10V  •  Drain to Source Voltage (Vdss): 600V  •  Gate Charge (Qg) @ Vgs: 60nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 20A  •  Input Capacitance (Ciss) @ Vds: 4250pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 150W  •  Mounting Type: Through Hole  •  Package / Case: 2-16C1B (TO-247 N)
Datasheet

Suppliers of «2SK3906(Q)»

Part NoManufacturerPriceStock
ООО "Интегральные схемы"2SK3906(Q)––from 7 days
Aspect2SK3906(Q)––from 7 days
HongKong Teyou Huicheng Electronic Technology LimitedFresh data!2SK3906(Q) (Package: : TO-3PN; , D/c: : 22+)Toshiba–45000
Digi-ic_SMART PIONEER ElectronicFresh data!2SK3906(Q) (MOSFET N-CH 600V 20A TO3P Подробнее)Toshiba Semiconductor and Storage–162384