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2SK2917(F)
— MOSFET N-CH 500V 18A 2-16F1B
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: Toshiba
•
RoHS/pb-free:
RoHS
Pb-free
•
Rds On (Max) @ Id, Vgs: 270 mOhm @ 10A, 10V
•
Drain to Source Voltage (Vdss): 500V
•
Gate Charge (Qg) @ Vgs: 80nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 18A
•
Input Capacitance (Ciss) @ Vds: 3720pF @ 10V
•
FET Polarity: N-Channel
•
FET Feature: Standard
•
Power - Max: 90W
•
Mounting Type: Through Hole
•
Package / Case: 2-16F1B
Datasheet
3186.pdf
on site toshiba.com
Part Numbers
2SK2917F
2SK2917FTOS
Location
China
Russia
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HongKong Teyou Huicheng Electronic Technology Limited
2SK2917(F)
Package: : TO-3PN(F); , D/c: : 22+
Toshiba
45000
Digi-ic_SMART PIONEER Electronic
2SK2917(F)
MOSFET N-CH 500V 18A TO3PIS
Подробнее
Toshiba Semiconductor and Storage
161334
Aspect
2SK2917F
from 7 days
2SK2917FTOS
from 7 days
ООО "Интегральные схемы"
2SK2917F
from 7 days
2SK2917FTOS
from 7 days
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Digi-ic_SMART PIONEER Electronic
Hong Kong
(86) 13512338801
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ShenZhen
(86) 0755-82535750
HongKong Teyou Huicheng Electronic Technology Limited
ShenZhen
(86) 18938853596, Fax: (0755) 82569815
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Aspect
St. Petersburg
+7 (812) 309-89-32
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ООО "Интегральные схемы"
St. Petersburg
+7 (812) 448-53-82
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