Features

2SK2700(T) — MOSFET N-CH 900V 3A 2-10R1B

Manufacturer: Toshiba  •  Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V  •  Drain to Source Voltage (Vdss): 900V  •  Gate Charge (Qg) @ Vgs: 25nC @ 10V  •  Current - Continuous Drain (Id) @ 25° C: 3A  •  Input Capacitance (Ciss) @ Vds: 750pF @ 25V  •  FET Polarity: N-Channel  •  FET Feature: Standard  •  Power - Max: 40W  •  Mounting Type: Through Hole  •  Package / Case: 2-10R1B  •  Other PartNo: 2SK2700T
Datasheet

Suppliers of «2SK2700(T)»

Part NoManufacturerPriceStock
ООО "Интегральные схемы"2SK2700(T)from 7 days
Aspect2SK2700(T)from 7 days