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Features
2SK2700(T)
— MOSFET N-CH 900V 3A 2-10R1B
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: Toshiba
•
Rds On (Max) @ Id, Vgs: 4.3 Ohm @ 1.5A, 10V
•
Drain to Source Voltage (Vdss): 900V
•
Gate Charge (Qg) @ Vgs: 25nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 3A
•
Input Capacitance (Ciss) @ Vds: 750pF @ 25V
•
FET Polarity: N-Channel
•
FET Feature: Standard
•
Power - Max: 40W
•
Mounting Type: Through Hole
•
Package / Case: 2-10R1B
•
Other PartNo: 2SK2700T
Datasheet
3108.pdf
on site toshiba.com
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