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2SK2602(F,T)
— MOSFET N-CH 600V 6A 2-16C1B
Discrete Semiconductor Products
»
MOSFETs - Single
Manufacturer: Toshiba
•
RoHS/pb-free:
RoHS
Pb-free
•
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 3A, 10V
•
Drain to Source Voltage (Vdss): 600V
•
Gate Charge (Qg) @ Vgs: 30nC @ 10V
•
Current - Continuous Drain (Id) @ 25° C: 6A
•
Input Capacitance (Ciss) @ Vds: 1300pF @ 10V
•
FET Polarity: N-Channel
•
FET Feature: Logic Level Gate
•
Power - Max: 125W
•
Mounting Type: Through Hole
•
Package / Case: 2-16C1B (TO-247 N)
Datasheet
3078.pdf
on site toshiba.com
Part Numbers
2SK2602F T
R574482885
Manufacturers
Radiall USA, Inc.
TOS
TOSHIBA
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