Manufacturer: ON Semiconductor  •  Voltage - Collector Emitter Breakdown (Max): 160V  •  Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA  •  Current - Collector (Ic) (Max): 600mA  •  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V  •  Power - Max: 625mW  •  Frequency - Transition: 300MHz  •  Transistor Type: NPN  •  Mounting Type: Through Hole  •  Package / Case: TO-92-3 (Standard Body), TO-226