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2N5551RLRA — TRANS NPN SS GP 0.6A 160V TO92

Manufacturer: ON Semiconductor  •  Voltage - Collector Emitter Breakdown (Max): 160V  •  Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA  •  Current - Collector (Ic) (Max): 600mA  •  DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V  •  Power - Max: 625mW  •  Frequency - Transition: 300MHz  •  Transistor Type: NPN  •  Mounting Type: Through Hole  •  Package / Case: TO-92-3 (Standard Body), TO-226  •  Other PartNo: 2N5551RLRAOSTR
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    Suppliers of «2N5551RLRA»

    SupplierPart NoManufacturerPriceStock
    ООО "Интегральные схемы"2N5551RLRA from 7 days
    ООО "Интегральные схемы"2N5551RLRAG from 7 days
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    ASOURCING ELECTRONICS2N5551RLRAG
    В наличии на складе TC в КНР. Доставка РФ в срок от 2 недель; , Package: : #N/A; , D/c: : 2021    		ON 4000
    AN-CHIPFresh data!2N5551RLRA
    микросхема интегральная электронная TRANS NPN SS GP 0.6A 160V TO92 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21    		ON Semiconductor 31213
    AN-CHIPFresh data!2N5551RLRAG
    микросхема интегральная электронная TRANS NPN GP SS 0.6A 160V TO92 4-5 недель, цена по запросу; , Package: : N/A; , Min order: : 1; , D/c: : DC: 20+/21    		ON Semiconductor 24411


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